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參數(shù)資料
| 型號： | 2N3799XG4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 240K |
| 代理商： | 2N3799XG4 |
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N3799X
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8240
Issue 2
Page 2 of 3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ
Max.
Units
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage
IC = -10mA
IB = 0
-50
V(BR)CBO
Collector-Base
Breakdown Voltage
IC = -10A
IE = 0
-60
V(BR)EBO
Emitter-Base Breakdown
Voltage
IE = -10A
IC = 0
-5
V
VCB = -50V
IE = 0
-0.01
ICBO
Collector Cut-Off Current
TA = 150°C
-10
A
IEBO
Emitter Cut-Off Current
VEB = -4V
IC = 0
-20
nA
IC = -100A
IB = -10A
-0.2
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage
IC = -1.0mA
IB = -100A
-0.25
IC = -100A
IB = -10A
-0.7
VBE(sat)
(1)
Base-Emitter Saturation
Voltage
IC = -1.0mA
IB = -100A
-0.8
VBE(on)
Base-Emitter On Voltage
IC = -100A
VCE = -5V
-0.7
V
IC = -1.0A
VCE = -5V
75
IC = -10A
VCE = -5V
225
IC = -100A
VCE = -5V
300
TA = -55°C
150
IC = -500A
VCE = -5V
300
IC = -1.0mA
VCE = -5V
300
hFE
(1)
Forward-current transfer
ratio
IC = -10mA
VCE = -5V
250
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%
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