參數(shù)資料
型號: 2N3767SMD
英文描述: TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | SMT
中文描述: 晶體管|晶體管|叩| 80V的五(巴西)總裁| 4A條一(c)|貼片
文件頁數(shù): 1/1頁
文件大小: 11K
代理商: 2N3767SMD
2
1
3
2.41 (0.095)
(0.030)
min.
0.127 (0.005)
(0.296)
0
(
m
3.175 (0.125)
Max.
0.50 (0.020)
max.
0.76
2.41 (0.095)
0.127 (0.005)
(0.286)
7.26
16 PLCS
0.50(0.020)
0.127 (0.005)
2N3767SMD05
Bipolar NPN Device.
V
CEO
= 80V
I
C
= 4A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO
*
80
V
I
C(CONT)
4
A
h
FE
@ 5/0.5 (V
CE
/ I
C
)
40
160
-
f
t
10M
Hz
P
D
25
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
15-Aug-02
Bipolar NPN Device in a
Hermetically sealed
Ceramic Surface Mount
Package for High
Reliability Applications
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
PINOUTS
1 – Base
2 – Collector
3 – Emitter
SMD0.5 (TO276AA)
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