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參數(shù)資料
| 型號： | 2N3764 |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Type 2N3764 Geometry 6706 Polarity PNP |
| 中文描述： | 類型2N3764幾何6706極性進步黨 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 117K |
| 代理商： | 2N3764 |
Data S heet No. 2N3764
OFF Characteristics
Collector-Base Breakdown Voltage
I
C
= 10 μA
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Emitter-Base Breakdown Voltage
I
E
= 10 μA
Collector-Emitter Cutoff Current
V
EB
= 2.0 V, V
CE
= 20 V
Collector-Emitter Cutoff Current
V
EB
= 2.0 V, V
CE
= 20 V, T
A
= 150
o
C
Collector-Base Cutoff Current
V
CB
= 20 V
Emitter-Base Cutoff Current
V
EB
= 2.0 V
Symbol
Min
Max
Unit
I
EBO
---
200
nA
I
CBO
---
100
nA
I
CEX2
---
150
μA
nA
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
V
V
(BR)CBO
40
---
I
CEX1
---
100
V
(BR)CEO
40
---
V
(BR)EBO
5.0
---
ON Characteristics
Forward current Transfer Ratio
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 150 mA, V
CE
= 1.0 V (pulse test)
I
C
= 500 mA, V
CE
= 1.0 V (pulse test)
I
C
= 1.0 A, V
CE
= 1.5 V (pulse test)
I
C
= 1.5 A, V
CE
= 5.0 V (pulse test)
I
C
= 500 mA, V
CE
= 1.0 V (pulsed), T
A
= -55
o
C
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1 mA (pulse test)
I
C
= 150 mA, I
C
= 15 mA (pulse test)
I
C
= 500 mA, I
B
= 50 mA (pulse test)
I
C
= 1.0 A, I
C
= 100 mA (pulse test)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1 mA
I
C
= 150 mA, I
B
= 15 mA (pulse test)
I
C
= 500 mA, I
B
= 50 mA (pulse test)
I
C
= 1.0 A, I
B
= 100 mA (pulse test)
Small Signal Characteristics
Magnitude of Common Emitter Short Circuit
Forward Current Transfer Ratio
I
C
= 50 mA, V
CE
= 10 V, f = 100 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
Switching Characteristics
Per Figure 1, MIL-S-19500/396D
Symbol
Min
Max
Unit
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
35
40
40
30
30
20
---
---
140
120
---
---
---
---
---
---
---
---
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
V
CE(sat)4
---
---
---
---
0.1
0.22
0.50
0.90
V dc
V dc
V dc
V dc
V
BE(sat)1
V
BE(sat)2
V
BE(sat)3
V
BE(sat)4
Symbol
---
---
---
---
0.8
1.0
1.2
1.4
Max
V dc
V dc
V dc
V dc
Unit
Min
C
IBO
---
80
pF
pF
C
OBO
---
25
---
|h
FE
|
1.8
6.0
Pulse Delay Time
t
d
---
8
ns
Pulse Rise Time
t
r
---
35
ns
Pulse Storage Time
t
s
---
80
ns
Pulse Fall Time
t
f
---
35
ns
Symbol
Min
Max
Unit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3764 | Small Signal Transistors |
| 2N3764 | PNP SWITCHING SILICON TRANSISTOR |
| 2N3765 | Type 2N3765 Geometry 6706 Polarity PNP |
| 2N3765 | PNP SWITCHING SILICON TRANSISTOR |
| 2N3767 | Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3765 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 1.5A 3PIN TO-46 - Bulk |
| 2N3766 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 60V 4A 3-Pin(2+Tab) TO-66 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 4A 3PIN TO-66 - Bulk 制造商:Microsemi 功能描述:Trans GP BJT NPN 60V 4A 3-Pin(2+Tab) TO-66 |
| 2N3766JANTX | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 60V 4A 3-Pin(2+Tab) TO-66 |
| 2N3766SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| 2N3766SMD05 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
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