- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄31612 > 2N3507ALJS (SEMICOA CORP) 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N3507ALJS |
| 廠商： | SEMICOA CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封裝： | HERMETIC SEALED, METAL CAN-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 323K |
| 代理商： | 2N3507ALJS |
2N3507AL
Silicon NPN Transistor
Dat a Sheet
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 100 A
80
Volts
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10 mA
50
Volts
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 10 A
5
Volts
Collector-Emitter Cutoff Current
ICEX1
VCE = 60 Volts, VEB = 4 Volts
1
A
Collector-Emitter Cutoff Current
ICEX2
VCE = 60 Volts, VEB = 4 Volts,
TA = 150°C
1.5
mA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
IC = 500 mA, VCE = 1 Volts
IC = 1.5 A, VCE = 2 Volts
IC = 2.5 A, VCE = 3 Volts
IC = 3.0 A, VCE = 5 Volts
IC = 500 mA, VCE = 2 Volts
TA = -55°C
35
30
25
20
17
175
150
Base-Emitter Saturation Voltage
VBEsat1
VBEsat2
VBEsat3
IC = 500 mA, IB = 50 mA
IC = 1.5 A, IB = 150 mA
IC = 2.5 A, IB = 250 mA
0.5
1.0
1.5
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
VCEsat3
IC = 500 mA, IB = 50 mA
IC = 1.5 A, IB = 150 mA
IC = 2.5 A, IB = 250 mA
0.8
1.0
1.3
2.0
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 5 Volts, IC = 100 mA,
f = 20 MHz
3
15
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
40
pF
Open Circuit Input Capacitance
CIBO
VEB = 3 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
300
pF
Delay Time
td
IC = 1.5 A, IB1 = 150 mA
15
ns
Rise Time
tr
IC = 1.5 A, IB1 = 150 mA
30
ns
Switching Characteristics
Storage Time
ts
IC = 1.5 A, IB1=IB2 = 150 mA
55
ns
Fall Time
tf
IC = 1.5 A, IB1=IB2 = 150 mA
35
ns
S
emicoa Corporation
Copyright
2010
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N357 | 500 mA, 15 V, NPN, Ge, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3671 | 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3504 | 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N3702 | 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N3414 | 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3507AU4 | 功能描述:NPN TRANSISTOR 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/349 包裝:散裝 零件狀態(tài):在售 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:3A 電壓 - 集射極擊穿（最大值）:50V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:1.5V @ 250mA，2.5A 電流 - 集電極截止（最大值）:1μA 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:30 @ 1.5A，2V 功率 - 最大值:1W 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-SMD，無引線 供應(yīng)商器件封裝:U4 標(biāo)準(zhǔn)包裝:1 |
| 2N3507JAN | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 50V 3A 3-Pin TO-39 |
| 2N3507JANTX | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 50V 3A 3-Pin TO-39 |
| 2N3507JANTXV | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 50V 3A 3-Pin TO-39 |
| 2N3507JX | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 50V 3A 3-Pin TO-39 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。