- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366215 > 2N3507 (Semicoa Semiconductor) Type 2N3507 Geometry 1506 Polarity NPN PDF資料下載
參數(shù)資料
| 型號： | 2N3507 |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Type 2N3507 Geometry 1506 Polarity NPN |
| 中文描述： | 類型2N3507幾何1506極性npn型 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 2N3507 |
Data S heet No. 2N3507
OFF Characteristics
Collector-Base Breakdown Voltage
I
C
= 10 μA
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Emitter-Base Breakdown Voltage
I
E
= 10 μA
Collector-Emitter Cutoff Current
V
CE
= 60 V, V
EB
= 4 V
Collector-Emitter Cutoff Current
V
CE
= 60 V, V
EB
= 4 V, T
A
= +150
o
C
Collector Current Continuous
V
CB
= 50 V
ON Characteristics
DC Current Gain
I
C
=
I
C
= 1.5 A, V
CE
= 2 V (pulsed)
I
C
= 2.5 A, V
CE
= 3 V (pulsed)
I
C
= 3.0 A, V
CE
= 5 V (pulsed)
I
C
= 500 mA, V
CE
= 1 V (pulsed), T
A
= -55
o
C
Base-Emitter Saturation Voltage
I
C
= 500 mA, I
B
= 50 mA (pulsed)
I
C
= 1.5 A, I
B
= 150 mA (pulsed)
I
C
= 2.5 A, I
B
= 250 mA (pulsed)
Collector-Emitter Saturation Voltage
I
C
= 500 mA, I
B
= 50 mA (pulsed)
I
C
= 1.5 A, I
B
= 150 mA (pulsed)
I
C
= 2.5 A, I
B
= 250 mA (pulsed)
Small Signal Characteristics
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio
V
CE
= 5 V, I
C
= 100 mA, f = 20 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 3 V, I
C
= 0, 100 kHz < f < 1 MHz
Pulse Response Characteristics
Delay Time
I
C
= 1.5 A, I
B1
= 150 mA
Rise Time
I
C
= 1.5 A, I
B1
= 150 mA
Storage Time
I
C
= 1.5 mA, I
B2
= I
B1
= 150 mA
Fall Time
I
C
= 1.5 mA, I
B2
= I
B1
= 150 mA
Symbol
Min
Max
Unit
I
C
3.0
---
A
I
CEX2
---
1.0
μA
I
CEX1
---
1.0
μA
V
V
(BR)EBO
5.0
---
V
(BR)CEO
50
---
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
(BR)CBO
80
---
V
Symbol
Min
Max
Unit
C
=
h
F
3
30
25
20
17
1
150
---
---
---
--
---
---
---
---
h
FE2
h
FE3
h
FE4
h
FE5
V
BE(sat)1
V
BE(sat)2
V
BE(sat)3
---
0.9
---
1.0
1.4
2.0
V dc
V dc
V dc
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
Symbol
---
---
---
0.5
1.0
1.5
Max
V dc
V dc
V dc
Unit
Min
pF
C
IBO
---
300
pF
C
OBO
---
40
|h
FE
|
3.0
15
---
Symbol
Min
Max
Unit
30
ns
t
r
---
t
d
---
15
ns
t
s
---
55
ns
t
f
---
35
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3507 | Small Signal Transistors |
| 2N3536 | Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package. |
| 2N3558 | Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package |
| 2N2329 | SCRs 1.6 Amp, Planear |
| 2N3537 | Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3507_07 | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon NPN Transistor |
| 2N3507A | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 3A 3PIN TO-39 - Bulk |
| 2N3507AJANS | 制造商:Semicoa Semiconductors 功能描述:2N3507AJS |
| 2N3507AL | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 3A 3PIN TO-5 - Bulk |
| 2N3507AU4 | 功能描述:NPN TRANSISTOR 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/349 包裝:散裝 零件狀態(tài):在售 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:3A 電壓 - 集射極擊穿（最大值）:50V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:1.5V @ 250mA，2.5A 電流 - 集電極截止（最大值）:1μA 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:30 @ 1.5A，2V 功率 - 最大值:1W 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-SMD，無引線 供應(yīng)商器件封裝:U4 標(biāo)準(zhǔn)包裝:1 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。