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參數(shù)資料
| 型號： | 2N3506JV |
| 廠商： | SEMICOA CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | HERMETIC SEALED, METAL CAN-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 407K |
| 代理商： | 2N3506JV |
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3506
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N3506J)
JANTX level (2N3506JX)
JANTXV level (2N3506JV)
JANS level (2N3506JS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose switching transistor
Low power
NPN silicon transistor
Features
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 1506
Reference document:
MIL-PRF-19500/349
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
40
Volts
Collector-Base Voltage
VCBO
60
Volts
Emitter-Base Voltage
VEBO
5
Volts
Collector Current, Continuous
IC
3
A
Power Dissipation, TA = 25
OC
Derate linearly above 25OC
PT
1
5.71
W
mW/
°C
Power Dissipation, TC = 25
OC
Derate linearly above 25OC
PT
5
28.6
W
mW/
°C
Thermal Resistance
RθJA
175
°C/W
Operating Junction Temperature
TJ
-65 to +200
°C
Storage Temperature
TSTG
-65 to +200
°C
Semicoa Corporation
Copyright
2010
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| 2N3506L | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Chip Type 2C3506 Geometry 1506 Polarity NPN |
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| 2N3507 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 50V 3A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR, TO-5, LAW - Bulk |
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| 2N3507A | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 3A 3PIN TO-39 - Bulk |
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