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| 型號： | 2N3418 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3 Amp, 85V, NPN Silicon Power Transistors JAN, JTX, JTXV, JANS |
| 中文描述： | 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封裝： | TO-5, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 63K |
| 代理商： | 2N3418 |
MSC0980A.DOC 12-02-98
2N3418
ELECTRICAL CHARACTERISTICS:
(25
°
Case Temperature Unless Otherwise Noted)
VALUE
Min.
60
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Max.
----
Units
BV
CEO
*
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Cutoff Current
I
C
= 50 mAdc, Cond. D (Note 1)
Vdc
I
CEX
*
V
EB
= 0.5 Vdc, Cond. A, V
CE
= 80 Vdc
V
EB
= 0.5 Vdc, Cond. A, T
A
= 150
°
C, V
CE
= 80
Vdc
V
CE
= 45 Vdc, Cond. D
----
----
----
0.3
50
5.0
μ
Adc
μ
Adc
μ
Adc
I
CEO*
Collector-Emitter
Cutoff Current
Emitter-Base
Cutoff Current
D.C. Current Gain
(Note 1)
I
EBO
*
V
EB
= 6 Vdc, Cond. D
V
EB
= 8 Vdc, Cond. D
I
C
= 100 mAdc, V
CE
= 2 Vdc
I
C
= 1 Adc, V
CE
= 2 Vdc
I
C
= 2 Adc, V
CE
= 2 Vdc
I
C
= 5 Adc, V
CE
= 5 Vdc
I
C
= 1 Adc, V
CE
= 2 Vdc, T
A
= - 55
°
C
I
C
= 1 Adc, I
B
= 0.1 Adc
I
C
= 2 Adc, I
B
= 0.2 Adc
----
----
20
20
15
10
10
----
----
0.5
10
----
60
----
----
----
0.25
0.5
μ
Adc
μ
Adc
----
----
----
----
----
Vdc
Vdc
hFE*
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
(Note 1)
Base-Emitter Saturation
Voltage (Note 1)
Forward Biased Second
Breakdown
V
BE(sat)*
I
C
= 1 Adc, I
B
= 0.1 Adc
I
C
= 2 Adc, I
B
= 0.2 Adc
V
CE
= 5 Vdc, T
C
=
100
°
C
V
CE
= 37 Vdc, T
C
=
100
°
C
V
CE
= 60 Vdc, T
C
=
100
°
C
0.6
0.7
1.2
1.4
Vdc
Vdc
I
S/b*
3
0.4
185
45
----
----
----
Adc
Adc
mAdc
E
S/b*
Unclamped Reverse
Biased Second
Breakdown
clamped Reverse Biased
Second Breakdown
Gain Bandwidth Product
I
C
= 3 Adc, L = 10 mH, Base Open
----
mj
E
S/b*
I
C
= 3 Adc, L = 40 mH, V
Clamp
=
85V
180
----
mj
f
T
*
I
C
= 0.1 Adc, V
CE
= 10 Vdc, f = 20 MHz
26
160
MHz
C
Ob
*
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, f = 1 MHz
----
150
pf
t
on
t
off
Turn-on Time
Turn-off Time
I
C
= 1 Adc, I
B1
= - I
B2
= 0.1 Adc
I
C
= 1 Adc, I
B1
= - I
B2
= 0.1 Adc
----
----
0.3
1.2
μ
s
μ
s
Note 1: Pulse Test: Pulse width = 300
μ
Sec., duty cycle
≤
2%.
* Indicates MIL-S-19500/393
相關PDF資料 |
PDF描述 |
|---|---|
| 2N3418JAN | NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 2N3418JANTX | NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 2N3418JANTXV | GBASE 350 C5E WHIT STRNDED BLK 1000FT |
| 2N3419SJAN | NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 2N3419SJANTXV | NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3418JAN | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 2N3418JANTX | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 2N3418JANTXV | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 2N3418S | 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 3A 3PIN TO-39 - Bulk |
| 2N3419 | 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 3A 3PIN TO-5 - Bulk |
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