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參數(shù)資料
| 型號(hào)： | 2N3250A |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 129K |
| 代理商： | 2N3250A |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland.
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
PNP SILICON
LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/323
T4-LDS-0093 Rev. 2 (101243)
Page 1 of 4
DEVICES
LEVELS
2N3250A
2N3251A
JAN
2N3250AUB
2N3251AUB
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
60
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
200
mAdc
Total Power Dissipation
@ TA = +25°C
(1)
@ TC = +25°C
(1)
PT
0.36
1.2
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
(1)
150
°C/W
Note:
1/ Consult 19500/323 for thermal curves
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
V(BR)CEO
60
Vdc
Collector-Emitter Cutoff Voltage
VBE = 3.0Vdc, VCE = 40Vdc
TA = 150°C
ICEX
20
ηAdc
μAdc
Collector-Base Cutoff Current
VCB = 60Vdc
VCB = 40Vdc
ICBO
10
20
μAdc
ηAdc
Emitter-Base Cutoff Current
VEB = 5.0Vdc
IEBO
10
μAdc
Collector-Emitter Cutoff Voltage
VBE = 3.0Vdc, VCE = 40Vdc
IBEX
50
ηAdc
TO-39 (TO-205AD)
UB Package
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PDF描述 |
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| 2N3250A | 200 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 2N3251A | 200 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 2N3250X | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 2N3251A.MODG4 | 200 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 2N3251A | 200 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3250A_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP SILICON LOW POWER TRANSISTOR |
| 2N3250AUB | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP SILICON LOW POWER TRANSISTOR |
| 2N3250CSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:GENERAL PURPOSE PNP TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
| 2N3250DCSM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | PNP | 60V V(BR)CEO | 200MA I(C) | LLCC |
| 2N3250X | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO18 |
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