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參數(shù)資料
| 型號： | 2N3114CSM |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
| 中文描述： | 150 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC1-3 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 20K |
| 代理商： | 2N3114CSM |
2N3114CSM
Bipolar NPN Device.
V
CEO
= 150V
I
C
= 0.1A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO
*
150
V
I
C(CONT)
0.1
A
h
FE
@ 10/30m (V
CE
/ I
C
)
30
120
-
f
t
40M
Hz
P
D
0.4
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
2-Aug-02
Bipolar NPN Device in a
Hermetically sealed LCC1
Ceramic Surface Mount
Package for High
Reliability Applications
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
2
1
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2
(
0
(
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
(0.31
rad.
A =
3
PINOUTS
1 – Base
2 – Emitter
3 - Collector
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|---|---|
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| 2N3117 | 功能描述:兩極晶體管 - BJT NPN Low Lvl SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3117 LEADFREE | 功能描述:兩極晶體管 - BJT NPN Low Lv1 SS sistors RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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