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參數(shù)資料
| 型號： | 2N3019CSM |
| 英文描述： | High Frequency NPN Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高頻NPN晶體管（高可靠性、陶瓷表貼封裝）) |
| 中文描述： | NPN晶體管高頻全封閉六窯業(yè)在表面貼裝封裝，高可靠性的應(yīng)用（高頻npn型晶體管（高可靠性，陶瓷表貼封裝）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 19K |
| 代理商： | 2N3019CSM |
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/94
LAB
SEME
2N3019CSM
Parameter
Transition Frequency
Capacitance
Input Capacitance
Small Signal Current Gain
Test Conditions
I
C
= 50mA
V
CE
= 10V
V
EB
= 0.5V
I
C
= 0
V
CB
= 10V
I
E
= 0
I
C
= 1mA
V
CE
= 5V
I
C
= 100
μ
A
V
CE
= 10V
R
g
= 1K
Min.
100
Typ.
Max.
Unit
MHz
pF
pF
—
Parameter
Collector – Emitter Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Test Conditions
I
C
= 10mA
I
C
= 10
μ
A
I
E
= 10
μ
A
V
CB
= 90V
V
CB
= 90V
T
amb
= 150°C
V
EB
= 5V
I
C
= 150mA
I
C
= 500mA
I
C
= 150mA
I
C
= 0.1mA
I
C
= 10mA
I
C
= 150mA
I
C
= 500mA
I
C
= 1A
I
C
= 150mA
Min.
80
140
7
Typ.
Max. Unit
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
I
C
= 0
V
BE
= 0
V
BE
= 0
I
B
= 15mA
I
B
= 50mA
I
B
= 15mA
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 0.5V
V
CEO*
V
(BR)CBO*
V
(BR)EBO*
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
V
CE(sat)*
Collector – Emitter Saturation Voltage
V
BE(sat)*
Base – Emitter Saturation Voltage
h
FE*
DC Current Gain
T
amb
= –55°C
10
10
10
0.20
0.50
1.1
50
90
100
50
15
40
300
V
V
V
nA
μ
A
nA
V
V
—
f
T
C
EBO
C
CBO
h
fe
NF
Noise Figure
f = 20MHz
f = 1.0MHz
f = 1.0MHz
f = 1kHz
f = 1kHz
60
12
400
80
4
db
t* Pulse test tp = 300
μ
s ,
δ ≤
2%
DYNAMIC CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
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