參數(shù)資料
型號： 2N3019
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： NPN medium power transistor
中文描述： 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
封裝： METAL PACKAGE-3
文件頁數(shù)： 2/2頁
文件大小： 17K
代理商： 2N3019
Prelim.6/99
2N3019
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Transition Frequency
Output Capacitance
Input Capacitance
Small Signal Current Gain
Collector Base Time Constant
Test Conditions
I
C
= 50mA
V
CE
= 10V
V
CB
= 10V
I
E
= 0
V
BE
= 0.5V
I
C
= 0
I
C
= 1mA
V
CE
= 5V
I
E
= 10mA
V
CB
= 10V
I
C
= 100
m
A
V
CE
= 10V
R
S
= 1K
W
Min.
100
Typ.
Max.
400
12
60
400
400
Unit
MHz
pF
pF
—
ps
db
Parameter
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Test Conditions
I
C
= 30mA
I
C
= 100
m
A
I
E
= 100
m
A
V
CB
= 90V
V
CB
= 90V
T
amb
= 150°C
V
BE
= 5V
I
C
= 150mA
I
C
= 500mA
I
C
= 150mA
I
C
= 0.1mA
I
C
= 10mA
I
C
= 150mA
I
C
= 500mA
I
C
= 1A
I
C
= 150mA
Min.
80
140
7
Typ.
Max. Unit
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
I
B
= 0
I
E
= 0
I
C
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
B
= 15mA
I
B
= 50mA
I
B
= 15mA
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 0.5V
V
(BR)CEO
V
(BR)CBO*
V
(BR)EBO*
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
V
CE(sat)
Collector – Emitter Saturation Voltage
V
BE(sat)
Base – Emitter Saturation Voltage
h
FE*
DC Current Gain
T
C
= –55°C
0.01
10
0.010
0.20
0.50
1.1
50
90
100
50
15
40
300
V
V
V
m
A
m
A
V
V
—
f
T
C
obo
C
ibo
h
fe
rb’C
c
NF
Noise Figure
f = 20MHz
f = 1.0MHz
f = 1.0MHz
f = 1kHz
f = 79.8MHz
f = 1kHz
80
15
4
t* Pulse test tp = 300
m
s ,
d ￡
1%
DYNAMIC CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
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