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參數(shù)資料
| 型號： | 2N2946AJS |
| 廠商： | SEMICOA CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-46 |
| 封裝： | HERMETIC SEALED, METAL CAN-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 331K |
| 代理商： | 2N2946AJS |
2N2946A
Silicon PNP Transistor
Dat a Sheet
Rev. 4.0
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10 A
35
Volts
Emitter-Collector Breakdown Voltage
V(BR)ECO
IE = 10 A, IB = 0 A
35
Volts
Collector-Base Cutoff Current
ICBO1
ICBO2
ICBO3
VCB = 40 Volts
VCB = 32 Volts
VCB = 40 Volts, TA = 100°C
10
0.5
2.5
A
nA
Emitter-Base Cutoff Current
IEBO1
IEBO2
IEBO3
VEB = 40 Volts
VEB = 32 Volts
VEB = 40 Volts, TA = 100°C
10
0.5
2.0
A
nA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Forward Current transfer ratio
hFE1
hFE2
IC = 1.0 mA, VCE = 0.5 Volts
IC = 1.0 mA, VCE = 0.5 Volts,
TA = -55°C
50
20
Forward Current transfer ratio (inverted
connection)
hFE(inv)1
hFE(inv)2
IE = 200 A, VEC = 0.5 Volts
IE = 200 A, VEC = 0.5 Volts,
TA = -55°C
20
10
Emitter-Collector Offset Voltage
VEC(ofs)1
VEC(ofs)2
VEC(ofs)3
IE = 0 A, IB = 200 A
IE = 0 A, IB = 1.0 mA
IE = 0 A, IB = 2.0 mA
0.8
2.0
2.5
mVolts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude of Common-Emitter Small-
Signal Short-Circuit Forward-Current
Transfer Ratio
|hFE|
VCE = 6 Volts, IC = 1.0 mA,
f = 1 MHz
5
55
Open Circuit Output Capacitance
COBO
VCB = 6 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
10
pF
Open Circuit Input Capacitance
CIBO
VEB = 6 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
6.0
pF
Small Signal Emitter-Collector On-
State Resistance
rec(ON)1
IB = 100 A, IE = 0 A,
Ie = 100 A ac (rms)
f = 1 kHz
14
Small Signal Emitter-Collector On-
State Resistance
rec(ON)2
IB = 1.0 mA, IE = 0 A,
Ie = 100 A ac (rms)
f = 1 kHz
8
Switching Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Delay Time
td
50
ns
Rise Time
tr
100
ns
Storage Time
ts
350
ns
Fall Time
tf
100
ns
Semicoa
Corporation
Copyright
2010
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PDF描述 |
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| 2N2946A | 100 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-46 |
| 2N2946AJX | 100 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-46 |
| 2N2946AUB | 100 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2946AUB | 功能描述:TRANS PNP 35V 0.1A 制造商:microsemi ire division 系列:- 包裝:散裝 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:100mA 電壓 - 集射極擊穿（最大值）:35V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:- 電流 - 集電極截止（最大值）:10μA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:50 @ 1mA，500mV 功率 - 最大值:400mW 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-SMD，無引線 供應(yīng)商器件封裝:UB 標(biāo)準(zhǔn)包裝:1 |
| 2N2946JANTXACCZK | 制造商:TCY 功能描述:2N2946 |
| 2N2947 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-3 |
| 2N2948 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 1.5A I(C) | TO-3 |
| 2N2949 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 700MA I(C) | TO-107 |
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