參數(shù)資料
型號(hào)： 2N292
廠商： Electronic Theatre Controls, Inc.
英文描述： alloy-junction germanium transistors
中文描述： 合金結(jié)鍺晶體管
文件頁(yè)數(shù)： 3/7頁(yè)
文件大?。?/td> 37K
代理商： 2N292
2N2920DCSM
–
QR
–
B
Prelim.11/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
ELECTRICAL CHARACTERISTICS
(Tamb= 25
°
C unless otherwise stated)
Parameter
TRANSISTOR MATCHING CHARACTERISTICS
NOTES
1) Terminals not under test are open circuited under all test conditions.
2) The lower of the two readings is taken as h
FE1
.
3) Average noise figure is measured in an amplifier with response down 3dB at 10Hz and 10 kHz and a high frequency
rolloff of 6dB / octave.
Test Conditions
Min.
Typ.
Max.
Unit
—
mV
mV
0.9
1
5
3
0.8
1
h
FE1
h
FE2
Static Forward Current Gain
Balance Ratio
|V
BE1
–
V
BE2
|
Base
–
Emitter Voltage
Differential
|
D
(V
BE1
–
V
BE2
)
D
T
A
|
Base
–
Emitter Voltage
Differential
V
CE
=
–
5V
See Note 2.
V
CE
=
–
5V
I
C
=
–
10
m
A to
–
10mA
V
CE
=
–
5V
V
CE
=
–
5V
T
A1
= 25
°
C
V
CE
=
–
5V
T
A1
= 25
°
C
I
C
=
–
100
m
A
I
C
=
–
100
m
A
I
C
=
–
100
m
A
T
A2
=
–
55
°
C
I
C
=
–
100
m
A
T
A2
= 125
°
C
OPERATING CHARACTERISTICS
(Tamb= 25
°
C unless otherwise stated)
Parameter
INDIVIDUAL TRANSISTOR CHARACTERISTICS
Test Conditions
1
Min.
Typ.
Max.
Unit
dB
dB
7
3
2.5
3.5
F
Spot Noise Figure
_
F
Average Noise Figure
V
CE
=
–
10V
R
G
= 3k
W
Noise Bandwidth = 20Hz
V
CE
=
–
10V
R
G
= 3k
W
Noise Bandwidth = 200Hz
V
CE
=
–
10V
R
G
= 3k
W
Noise Bandwidth = 2kHz
V
CE
=
–
10V
R
G
= 3k
W
Noise Bandwidth = 15.7kHz
See Note 3.
I
C
=
–
100
m
A
f = 100Hz
I
C
=
–
100
m
A
f = 1kHz
I
C
=
–
100
m
A
f = 10kHz
I
C
=
–
100
m
A
相關(guān)PDF資料
PDF描述
2N2920DCSM DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
2N2920DCSM Dual NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(開(kāi)關(guān)型雙NPN晶體管（高可靠性、陶瓷表貼封裝）)
2N2920 Dual Transistors
2N2920A Dual Transistors
2N2920 DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N2920 功能描述:兩極晶體管 - BJT NPN Low Noise RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N2920_02 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon NPN Transistor
2N2920A 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTORNPNNPN60V0.05ATO78 制造商:SOLID STATE 功能描述:TRANSISTOR,NPNNPN,60V,0.05A,TO78 制造商:Solid State Devices Inc (SSDI) 功能描述:BIPOLAR TRANSISTOR, DUAL NPN, 60V, TO-71; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:1.5W; DC Collector Current:30mA; DC Current Gain hFE:600; Operating Temperature Min:-65C; No. of Pins:7
2N2920ADCSM 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Dual Bipolar NPN Devices in a hermetically sealed
2N2920AHR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Hi-Rel NPN dual matched bipolar transistor 60 V - 0.03 A
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