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參數(shù)資料
| 型號(hào)： | 2N2920ADCSM |
| 英文描述： | NPN |
| 中文描述： | 叩 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 37K |
| 代理商： | 2N2920ADCSM |
2N2920DCSM
–
QR
–
B
Prelim.11/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
1
Min.
Typ.
Max.
Unit
V
nA
m
A
nA
—
V
V
k
W
—
m
mho
—
pF
60
60
5
10
10
20
100
150
75
150
150
125
450
450
450
–
0.7
–
0.7
–
0.8
–
0.2
–
0.25
3
30
150
600
25 x 10
-4
5
60
1
1
5
4
8
V
(BR)CBO
V
(BR)CEO*
V
(BR)EBO
Collector
–
Base Breakdown Voltage
Collector
–
Emitter Breakdown Voltage
Emitter
–
Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
V
BE
Base
–
Emitter Voltage
V
CE(sat)
Collector
–
Emitter Saturation Voltage
h
ie
Small Signal Common
–
Emitter
Input Impedance
Small Signal Common
–
Emitter
Current Gain
Small Signal Common
–
Emitter
Reverse Voltage Gain
Small Signal Common
–
Emitter
Output Admittance
h
fe
h
re
h
oe
|h
fe
|
Small Signal Common
–
Emitter
Current Gain
C
obo
Common
–
Base Open Circuit
Output Capacitance
Common
–
Base Open Circuit
Input Capacitance
C
ibo
I
C
=
–
10
m
A
I
C
=
–
10mA
I
E
=
–
10
m
A
V
CB
=
–
50V
I
E
= 0
I
B
= 0
I
C
= 0
I
E
= 0
T
A
= 150
°
C
I
C
= 0
V
CE
= 5V
V
CE
= 5V
T
A
=
–
55
°
C
V
CE
=
–
5V
V
CE
=
–
5V
V
CE
=
–
5V *
V
CE
=
–
5V
I
C
=
–
100
m
A
I
C
=
–
1mA
I
C
=
–
100
m
A
I
C
=
–
1mA
V
EB
=
–
4V
I
C
= 10
m
A
I
C
=
–
100
m
A
I
C
=
–
500
m
A
I
C
=
–
1mA
I
C
=
–
10mA
I
C
=
–
100
m
A
I
B
=
–
10
m
A
I
B
=
–
100
m
A
I
B
=
–
10
m
A
I
B
=
–
100
m
A
V
CE
=
–
10V
I
C
=
–
1mA
f = 1kHz
V
CE
=
–
5V
f = 30MHz
V
CE
=
–
5V
f = 100MHz
V
CB
=
–
5V
f = 100kHz
V
EB
=
–
0.5V
f = 100kHz
I
C
=
–
500
m
A
I
C
=
–
1mA
I
E
= 0
I
C
= 0
ELECTRICAL CHARACTERISTICS
(Tamb= 25
°
C unless otherwise stated)
NOTES
* Pulse Test: t
p
= 300
m
s,
d ￡
2%.
1) Terminals not under test are open circuited under all test conditions.
INDIVIDUAL TRANSISTOR CHARACTERISTICS
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