參數(shù)資料
型號: 2N2907A
廠商: 意法半導(dǎo)體
英文描述: General Purpose Amplifiers and Switches(硅平面外延工藝PNP晶體管(用于高速飽和開關(guān)))
中文描述: 通用放大器和開關(guān)(硅平面外延工藝進(jìn)步黨晶體管(用于高速飽和開關(guān)))
文件頁數(shù): 2/7頁
文件大小: 81K
代理商: 2N2907A
THERMAL DATA
TO-39
TO-18
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
58.3
292
97.3
437.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= -50 V
V
CB
= -50 V
T
case
= 150
o
C
-10
-10
nA
μ
A
I
CEX
Collector Cut-off
Current (V
BE
= -0.5V)
Base Cut-off Current
(V
BE
= -0.5V)
V
CE
= -30 V
-50
nA
I
BEX
V
CE
= -30 V
-50
nA
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= -10
μ
A
-60
V
I
C
= -10 mA
-60
V
I
E
= -10
μ
A
-5
V
I
C
= -150 mA
I
C
= -500 mA
I
B
= -15 mA
I
B
= -50 mA
-0.4
-1.6
V
V
I
C
= -150 mA
I
C
= -500 mA
I
B
= -15 mA
I
B
= -50 mA
-1.3
-2.6
V
V
h
FE
DC Current Gain
I
C
= -0.1 mA
I
C
= -1 mA
I
C
= -10 mA
I
C
= -150 mA
I
C
= -500 mA
V
CE
= -10 V
V
CE
= -10 V
V
CE
= -10 V
V
CE
= -10 V
V
CE
= -10 V
75
100
100
100
50
300
f
T
Transition Frequency
V
CE
= -50 V
I
C
= -20 mA
I
C
= 0
f = 100 MHz
200
MHz
C
EBO
Emitter Base
Capacitance
Collector Base
Capacitance
Delay Time
V
EB
= -2 V
f = 1MHz
30
pF
C
CBO
I
E
= 0
V
CB
= -10 V
f = 1MHz
8
pF
t
d
V
CC
= -30 V
I
B1
= -15 mA
V
CC
= -30 V
I
B1
= -15 mA
V
CC
= -6 V
I
B1
= -I
B2
= -15 mA
V
CC
= -6 V
I
B1
= -I
B2
= -15 mA
V
CC
= -30 V
I
B1
= -15 mA
V
CC
= -6 V
I
B1
= -I
B2
= -15 mA
I
C
= -150 mA
10
ns
t
r
Rise Time
I
C
= -150 mA
40
ns
t
s
Storage Time
I
C
= -150 mA
80
ns
t
f
Fall Time
I
C
= -150 mA
30
ns
t
on
Turn-on Time
I
C
= -150 mA
45
ns
t
off
Turn-off Time
I
C
= -150 mA
100
ns
Pulsed: Pulse duration = 300
μ
s, duty cycle
1 %
See test circuit
2N2905A/2N2907A
2/7
相關(guān)PDF資料
PDF描述
2N2920DCSM-QR-B 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
2N2920ADCSM NPN
2N292 alloy-junction germanium transistors
2N2920DCSM DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
2N2920DCSM Dual NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(開關(guān)型雙NPN晶體管(高可靠性、陶瓷表貼封裝))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N2907A DIE 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk
2N2907A DL 功能描述:DIE TRANS PNP MED PWR GP DUAL 制造商:fairchild/micross components 系列:* 零件狀態(tài):有效 標(biāo)準(zhǔn)包裝:25
2N2907A W/GOLD 功能描述:TRANS PNP 60V 0.6A TO-18 制造商:central semiconductor corp 系列:* 零件狀態(tài):生命周期結(jié)束 標(biāo)準(zhǔn)包裝:500
2N2907A 制造商:STMicroelectronics 功能描述:TRANSISTOR PNP TO-18
2N2907A_02 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon PNP Transistor