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參數(shù)資料
| 型號： | 2N2904E |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) |
| 中文描述： | 外延平面NPN晶體管（通用，開關(guān)） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 2N2904E |
2002. 9. 17
2/4
Revision No : 0
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CEX
V
CE
=30V, V
EB
=3V
-
-
50
nA
Base Cut-off Current
I
BL
V
CE
=30V, V
EB
=3V
-
-
50
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10 A, I
E
=0
60
-
-
V
Collector-Emitter Breakdown Voltage *
V
(BR)CEO
I
C
=1mA, I
B
=0
40
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
6.0
-
-
V
DC Current Gain *
h
FE
(1)
V
CE
=1V, I
C
=0.1mA
40
-
-
h
FE
(2)
V
CE
=1V, I
C
=1mA
70
-
-
h
FE
(3)
V
CE
=1V, I
C
=10mA
100
-
300
h
FE
(4)
V
CE
=1V, I
C
=50mA
60
-
-
h
FE
(5)
V
CE
=1V, I
C
=100mA
30
-
-
Collector-Emitter Saturation Voltage *
V
CE(sat)
1
I
C
=10mA, I
B
=1mA
-
-
0.2
V
V
CE(sat)
2
I
C
=50mA, I
B
=5mA
-
-
0.3
Base-Emitter Saturation Voltage *
V
BE(sat)
1
I
C
=10mA, I
B
=1mA
0.65
-
0.85
V
V
BE(sat)
2
I
C
=50mA, I
B
=5mA
-
-
0.95
Transition Frequency
f
T
V
CE
=20V, I
C
=10mA, f=100MHz
300
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=5V, I
E
=0, f=1MHz
-
-
4.0
pF
Input Capacitance
C
ib
V
BE
=0.5V, I
C
=0, f=1MHz
-
-
8.0
pF
Input Impedance
h
ie
V
CE
=10V, I
C
=1mA, f=1kHz
1.0
-
10
k
Voltage Feedback Ratio
h
re
0.5
-
8.0
x10
-4
Small-Signal Current Gain
h
fe
100
-
400
Collector Output Admittance
h
oe
1.0
-
40
Noise Figure
NF
V
CE
=5V, I
C
=0.1mA Rg=1k
f=10Hz
15.7kHz
,
-
-
5.0
dB
Switching Time
Delay Time
t
d
V
out
Total< 4pF
C
10k
2
V =3.0V
300ns
-0.5V
10.9V
0 ,t < 1ns, Du=2%
in
V
-
-
35
nS
Rise Time
t
r
-
-
35
Storage Time
t
stg
20
μ
s
or 1N916
10.9V
-9.1V
V
out
Total< 4pF
C
V =3.0V
2
10k
V
in
0 ,t < 1ns, Du=2%
-
-
200
Fall Time
t
f
-
-
50
ELECTRICAL CHARACTERISTICS (Ta=25
)
2N2904E
* Pulse Test : Pulse Width
300 S, Duty Cycle
2%.
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