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參數(shù)資料
| 型號： | 2N2894DCSM |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE |
| 中文描述： | 200 mA, 12 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC2-6 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 15K |
| 代理商： | 2N2894DCSM |
Parameter
Test Conditions
I
C
= 10mA
I
C
= 10
m
A
I
C
= 10
m
A
I
E
= 100
m
A
V
CB
= 6V
V
CE
= 6V
V
CE
= 6V
I
C
= 10mA
I
C
= 30mA
I
C
= 100mA
I
C
= 10mA
I
C
= 30mA
I
C
= 100mA
I
C
= 10mA
I
C
= 30mA
I
C
= 30mA
Min.
12
12
12
4
Typ.
Max.
Unit
V
m
A
nA
V
V
—
MHz
pF
ns
10
80
80
0.15
0.2
0.5
0.98
1.2.
1.7
0.78
0.85
30
40
150
17
25
400
6
6
60
90
I
B
= 0
V
BE
= 0
I
E
= 0
I
C
= 0
T
amb
= 125
°
C
V
BE
= 0
V
BE
= 0
I
B
= 1mA
I
B
= 3mA
I
B
= 10mA
I
B
= 1mA
I
B
= 3mA
I
B
= 10mA
V
CE
= 0.3V
V
CE
= 0.5V
V
CE
= 0.5V
T
amb
= -55
°
C
V
CE
= –0.5V
f = 100MHz
I
C
= –30mA
V
CE
= 10V
I
C
= 30mA
V
CB
= 5V
f = 140KHz
V
BE
= 0.5V
f = 140KHz
I
E
= 0
I
C
= 0
V
CC
= 2V
I
B1
= – I
B2
=1.5mA
I
C
= 30mA
2N2894
Prelim. 4/99
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
ELECTRICAL CHARACTERISTICS
(TA= 25°C unless otherwise stated)
BV
CEO(SUS)
Collector – Base BreakdownVoltage
BV
CES
Collector – Emitter Breakdown Voltage
BV
CBO
Collector – Base Breakdown Voltage
BV
EBO
Emitter Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
CES
Collector Cut-off Current
I
B
Base Current
V
CE(sat)
Collector – Emitter Saturation Voltage
V
BE(sat)
Base – Emitter On Voltage
h
FE
DC Current Gain
f
T
Current Gain Bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
t
on
Turn on Time
t
off
Turn off Time
* Pulse Test: t
p
￡
300
m
s,
d ￡
1%.
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2894DCSM_03 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:DUAL HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE |
| 2N2894L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 200MA I(C) | TO-18 |
| 2N2895 | 制造商:motorola 功能描述:DIODE 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 18 NPN Silicon Transistor |
| 2N2896 | 功能描述:兩極晶體管 - BJT NPN Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2897 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 18 NPN Silicon Transistor |
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