參數(shù)資料
型號(hào)： 2N2894CSM
英文描述： High Speed Medium Power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、開(kāi)關(guān)型PNP晶體管（高可靠性、陶瓷表貼封裝）)
中文描述： 高速中功率開(kāi)關(guān)晶體管進(jìn)步黨在全封閉六窯業(yè)表面貼裝封裝，高可靠性的應(yīng)用（高速，中等功率，開(kāi)關(guān)型進(jìn)步黨晶體管（高可靠性，陶瓷表貼封裝））
文件頁(yè)數(shù)： 2/2頁(yè)
文件大小： 16K
代理商： 2N2894CSM
Parameter
Collector
–
Base Breakdown Voltage
Collector
–
Emitter Breakdown Voltage
Emitter
–
Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Test Conditions
I
C
= 10
m
A
I
C
= 10mA
I
E
= 10
m
A
V
CB
=
–
6V
V
BE
= 0
I
C
=
–
10mA
I
C
=
–
30mA
I
C
=
–
100mA
I
C
=
–
10mA
I
C
=
–
30mA
I
C
=
–
100mA
I
C
=
–
10mA
I
C
=
–
30mA
I
C
=
–
100mA
I
C
=
–
30mA
Min.
–
12
–
12
–
4
Typ.
Max.
Unit
V
nA
V
V
–—
MHz
pF
pF
ns
ns
–
10
–
80
–
0.15
–
0.20
–
0.50
–
0.98
–
1.2.
–
1.7
–
0.78
–
0.85
30
40
25
150
17
400
6
6
60
9
I
E
= 0
I
B
= 0
I
C
= 0
T
amb
= 125
°
C
V
CE
=
–
6V
I
B
=
–
1mA
I
B
=
–
3mA
I
B
=
–
10mA
I
B
=
–
1mA
I
B
=
–
3mA
I
B
=
–
10mA
V
CE
=
–
0.3V
V
CE
=
–
0.5V
V
CE
=
–
1V
V
CE
=
–
0.5V
T
amb
= 125
°
C
f = 100MHz
V
CE
=
–
10V
I
C
=
–
30mA
V
EB
=
–
5V
f = 1MHz
V
CB
=
–
5V
f = 1MHz
I
C
=
–
30mA
I
B2
=
–
1.5mA
I
C
=
–
30mA
I
B1
= I
B2
=
–
1.5mA
I
C
= 0
I
C
= 0
V
CE
=
–
2V
V
CE
=
–
2V
2N2894CSM
Prelim. 10/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk
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