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參數資料
| 型號： | 2N2894CSM-JQR-BG4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, LCC1-3 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 22K |
| 代理商： | 2N2894CSM-JQR-BG4 |
2N2894CSM
Prelim. 10/98
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
HIGH SPEED, MEDIUM POWER, PNP
GENERAL PURPOSE TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
SCREENING OPTIONS AVAILABLE
HIGH SPEED, LOW SATURATION SWITCH
APPLICATIONS:
Hermetically sealed surface mount version
of the popular 2N2894 for high reliability
applications requiring small size and low
weight devices.
VCBO
Collector – Base Voltage
VCEO
Collector – Emitter Voltage
VEBO
Emitter – Base Voltage
IC
Collector Current
PD
Total Device Dissipation
@ TA =25°C
Derate above 25°C
PD
Total Device Dissipation
@ TC =25°C
Derate above 25°C
TSTG , TJ
Operating and Storage Temperature Range
-12V
-4V
200mA
360mW
2.06mW / °C
1.2W
6.85mW / °C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
SOT23 CERAMIC
(LCC1 PACKAGE)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
PAD 1 – Base
Underside View
PAD 2 – Emitter
PAD 3 – Collector
21
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.
54
±
0.
13
(0
.10
±
0.
005)
0.
76
±
0.
1
5
(0
.03
±
0.
00
6)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
A =
3
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N2894DCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:DUAL HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE |
| 2N2894DCSM_03 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:DUAL HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE |
| 2N2894L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 200MA I(C) | TO-18 |
| 2N2895 | 制造商:motorola 功能描述:DIODE 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 18 NPN Silicon Transistor |
| 2N2896 | 功能描述:兩極晶體管 - BJT NPN Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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