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參數(shù)資料
| 型號(hào)： | 2N2857JS |
| 廠商： | SEMICOA CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72 |
| 封裝： | HERMETIC SEALED, METAL CAN-4 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 467K |
| 代理商： | 2N2857JS |
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N2857
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N2857J)
JANTX level (2N2857JX)
JANTXV level (2N2857JV)
JANS level (2N2857JS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
Ultra-High frequency transistor
Low power
NPN silicon transistor
Features
Hermetically sealed TO-72 metal can
Also available in chip configuration
Chip geometry 0011
Reference document:
MIL-PRF-19500/343
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
15
Volts
Collector-Base Voltage
VCBO
30
Volts
Emitter-Base Voltage
VEBO
3
Volts
Collector Current, Continuous
IC
40
mA
Power Dissipation, TA = 25
OC
Derate linearly above 25OC
PT
200
1.14
mW
mW/
°C
Power Dissipation, TC = 25
OC
Derate linearly above 25OC
PT
300
1.71
mW
mW/
°C
Operating Junction Temperature
TJ
-65 to +200
°C
Storage Temperature
TSTG
-65 to +200
°C
Semicoa Corporation
Copyright
2010
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