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參數資料
| 型號： | 2N2816 |
| 英文描述： | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16 |
| 中文描述： | 晶體管|晶體管|叩| 100V的五（巴西）總裁|甲一（c）| STR-5/16 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 15K |
| 代理商： | 2N2816 |
2N2894
Prelim. 4/99
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
PNP SILICON
TRANSISTOR
FEATURES
SILICON PNP TRANSISTOR
HIGH SPEED, LOW SATURATION SWITCH
APPLICATIONS:
GENERAL PURPOSE SWITCHING
APPLICATIONS
V
CBO
V
CEO
V
EBO
I
C
P
D
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
Total Device Dissipation
@ T
A
=25°C
Derate above 25°C
@ T
C
=25°C
Derate above 25°C
P
D
Total Device Dissipation
T
STG
, T
J
Operating and Storage Temperature Range
12V
12V
4V
200mA
360mW
2.06mW / °C
12W
6.85mW / °C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
TO18
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise stated)
PIN1 – EMITER
Underside View
PIN 2 – BASE
PIN 3 – COLLECTOR
1
3
2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5
4
1
m
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| 2N2820 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 25A I(C) | STR-5/16 |
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