參數(shù)資料
型號: 2N2369ADCSM
英文描述: High Speed Medium Power NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、開關(guān)型NPN晶體管(高可靠性、陶瓷表貼封裝))
中文描述: 高速中功率NPN開關(guān)晶體管氣密六窯業(yè)表面貼裝封裝,高可靠性的應(yīng)用(高速,中等功率,開關(guān)型npn型晶體管(高可靠性,陶瓷表貼封裝))
文件頁數(shù): 2/2頁
文件大小: 17K
代理商: 2N2369ADCSM
Parameter
Collector
Emitter Breakdown Voltage
Collector
Base Breakdown Voltage
Emitter
Base Breakdown Voltage
Test Conditions
I
C
= 10mA
I
C
= 10
m
A
I
E
= 10
m
A
V
CE
= 20V
V
CE
= 10V
Min.
15
40
4.5
Typ.
Max.
Unit
V
V
V
2N2369ADCSM
Prelim. 3/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
T
A
= +150
°
C
V
CB
= 20V
T
A
= +125
°
C
V
EB
= 4V
I
C
= 10mA
I
B
= 1mA
T
A
= +150
°
C
I
B
= 3mA
I
B
= 10mA
T
A
= +25
°
C
T
A
= +150
°
C
T
A
=
55
°
C
I
B
= 3mA
I
B
= 10mA
V
CE
= 0.35V
V
CE
= 0.40V
V
CE
= 1V
T
A
=
55
°
C
V
CE
= 1V
V
CE
= 10V
I
C
= 30mA
I
C
= 100mA
I
C
= 10mA
I
B
= 1mA
I
C
= 30mA
I
C
= 100mA
I
C
= 10mA
I
C
= 30mA
I
C
= 10mA
I
C
= 100mA
I
C
= 10mA
f = 100MHz
V
CB
= 5V
f = 100kHz to 1MHz
V
EB
= 0.5V
f = 100kHz to 1MHz
I
C
= 10mA
I
B1
=
I
B2
= 10mA
I
C
= 10mA
I
B1
= 3mA
I
E
= 0
I
C
= 0
I
B2
=
1.5mA
ELECTRICAL CHARACTERISTICS
(TA= 25
°
C unless otherwise stated)
V
(BR)CEO*
V
(BR)CBO
V
(BR)EBO
I
CES
Collector
Emitter Cut-off Current
I
CBO
Collector
Base Cut-off Current
I
EBO
Emitter
Base Cut-off Current
V
CE(sat)
Collector
Emitter Saturation Voltage
V
BE(sat)
Base
Emitter Saturation Voltage
h
FE*
Current Gain
|h
fe
|
Magnitude of h
fe
C
ob
Output Capacitance
C
ib
Input Capacitance
t
s
Storage Time
t
on
t
off
Turn
On Time
Turn
Off Time
0.40
0.30
30
0.20
30
0.25
0.20
0.30
0.25
0.43
0.85
0.70
0.59
1.02
0.90
1.20
120
120
120
40
30
40
20
20
120
5
10
4
5
13
12
18
m
A
m
A
m
A
V
V
pF
ns
ns
* Pulse Test: t
p
300
m
s,
d £
2%.
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