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參數(shù)資料
| 型號(hào)： | 2N2369A |
| 廠商： | Boca Semiconductor Corp. |
| 英文描述： | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| 中文描述： | NPN硅外延平面晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | 2N2369A |
2N2369A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5277
Issue 1
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and
reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that
datasheets are current before placing orders.
Test Conditions
I
C
= 10mA
I
C
= 10
μ
A
I
E
= 10
μ
A
V
CE
= 20V
V
CB
= 20V
I
C
= 10mA
Min.
15
40
4.5
Typ.
Max.
T
A
= +150°C
I
B
= 1mA
T
A
= +125°C
I
B
= 3mA
I
B
= 10mA
I
B
= 1mA
I
B
= 3mA
I
B
= 10mA
I
B
= 1mA
I
C
= 30mA
I
C
= 100mA
I
C
= 10mA
I
C
= 30mA
I
C
= 100mA
I
C
= 10mA
T
A
= -55°C to +125°C
I
C
= 10mA
I
C
= 10mA
I
C
= 30mA
I
C
= 100mA
I
C
= 10mA
V
CE
= 0.35V
V
CE
= 1V
V
CE
= 0.40V
V
CE
= 1V
V
CE
= 0.35V
T
A
= –55°C
V
CE
= 10V
I
C
= 10mA
f = 100MHz
I
E
= 0
f = 1MHz
I
C
= 10mA
I
B1
= –I
B2
= 10mA
I
C
= 10mA
I
B1
= 3mA
V
CB
= 5V
V
CC
= 10V
V
CC
= 3V
I
B2
= –1.5mA
ELECTRICAL CHARACTERISTICS
(TA= 25°C unless otherwise stated)
V
(BR)CEO*
V
(BR)CBO
V
(BR)EBO
I
CES
I
CBO
V
CE(sat)*
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Emitter Cut-off Current
Collector – Base Cut-off Current
Collector – Emitter Saturation Voltage
V
BE(sat)*
Base – Emitter Saturation Voltage
h
FE*
DC Current Gain
f
T
Transition Frequency
C
cbo
Output Capacitance
t
s
Storage Time
t
on
t
off
Turn–On Time
Turn–Off Time
0.40
30
0.20
0.30
0.25
0.5
0.85
1.15
1.6
0.70
0.8
0.9
1.1
0.59
1.02
40
40
30
20
120
120
71
20
50
500
675
2.3
4
6
13
9
13
12
18
V
V
V
μ
A
μ
A
V
V
—
MHz
pF
ns
ns
* Pulse Test: t
p
≤
300
μ
s,
δ ≤
2%.
Parameter
Unit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N2369 | Switching Transistors |
| 2N2369ACSM | HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
| 2N2369ADCSM | DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE |
| 2N2369ACSM | High Speed Medium Power NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、開關(guān)型NPN晶體管（高可靠性、陶瓷表貼封裝）) |
| 2N2369ADCSM | High Speed Medium Power NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、開關(guān)型NPN晶體管（高可靠性、陶瓷表貼封裝）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2369A_02 | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon NPN Transistor |
| 2N2369A_07 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
| 2N2369A_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN SILICON TRANSISTOR |
| 2N2369A1 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
| 2N2369ACSM | 制造商:TT Electronics/ Semelab 功能描述:TRANSISTORHIRELNPN15V0.2ALCC1 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR,HIREL,NPN,15V,0.2A,LCC1 制造商:SEMELAB 功能描述:TRANSISTOR,HIREL,NPN,15V,0.2A,LCC1; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Power Dissipation Pd:360mW; DC Collector Current:200mA; DC Current Gain hFE:40; Operating Temperature Min:-65C; No. of Pins:3 ;RoHS Compliant: Yes |
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