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參數(shù)資料
| 型號(hào)： | 2N2326AS |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 晶閘管 |
| 英文描述： | SILICON CONTROLLED RECTIFIER |
| 中文描述： | 0.3454 A, 200 V, SCR, TO-5 |
| 封裝： | TO-5, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | 2N2326AS |
TECHNICAL DATA
SILICON CONTROLLED RECTIFIER
Qualified per MIL-PRF-19500/ 276
Devices
Qualified
Level
2N2323
2N2323S
2N2323A
2N2323AS
MAXIMUM RATINGS
2N2324
2N2324S
2N2324A
2N2324AS
2N2326
2N2326S
2N2326A
2N2326AS
2N2328
2N2328S
2N2328A
2N2328AS
2N2329
2N2329S
JAN
JANTX
JANTXV
Ratings
Sym 2N2323,S/
2N2323A,S
V
RM
2N2324,S/
2N2324A,S
100
150
100
(3/4)
2N2326,S/
2N2326A,S
200
300
200
(3/4)
0.22
15
6
-65 to +125
-65 to +150
2N2328,S/
2N2328A,S 2N2329,S Unit
300
400
300
(3/4)
Reverse Voltage
Working Peak Reverse Voltage V
RM
Forward Blocking Voltage
Average Forward Current
(1)
Forward Current Surge Peak
(2)
Cathode-Gate Current
Operating Temperature
Storage Junction Temp
1) This average forward current is for an ambient temperature of 80
0
C and 180 electrical degrees of
conduction.
2) Surge current is non-recurrent. The rate of rise of peak surge current shall not exceed 40 A during
the first 5
μ
s after switching from the ‘off’ (blocking) to the ‘on’ (conducting) state. This is measured
from the point where the thyristor voltage has decayed to 90% of its initial blocking value.
3) Gate connected to cathode through 1,000 ohm resistor.
4) Gate connected to cathode through 2,000 ohm resistor.
ELECTRICAL CHARACTERISTICS
Characteristics
SUBGROUP 2 TESTING
Reverse Blocking Current
R
2
= 1 k
μ
2N2323 thru 2N2329
2N2323S thru 2N2329S
R
2
= 2 k
μ
2N2323A thru 2N2328A
2N2323AS thru 2N2328AS
V
R
= 50 Vdc
2N2323, S, A, AS
V
R
= 100 Vdc
2N2324, S, A, AS
V
R
= 200 Vdc
2N2326, S, A, AS
V
R
= 300 Vdc
2N2328, S, A, AS
V
R
= 400 Vdc
2N2329, S,
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
50
75
50
(3/4)
400
500
400
(3)
Vdc
Vpk
Vpk
Adc
Adc
Vpk
0
C
0
C
V
FBXM
I
O
I
FSM
V
KGM
T
op
T
stg
TO-5
*See appendix A
for package outline
Symbol
Min.
Max.
Unit
I
RBX1
10
μ
Adc
120101
Page 1 of 2
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