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參數(shù)資料
| 型號(hào)： | 2N2222ACSMG4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, LCC1-3 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 272K |
| 代理商： | 2N2222ACSMG4 |
SILICON SWITCHING
NPN TRANSISTOR
2N2222ACSM
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 3391
Issue 4
Page 2 of 3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ.
Max.
Units
V(BR)CEO
(3)
Collector-Emitter
Sustaining Voltage
IC = 10mA
IB = 0
50
V
ICES
Collector-Emitter
Cut-Off Current
VCE = 50V
50
nA
IE = 0
VCB = 75V
10
A
IE = 0
VCB = 60V
10
nA
ICBO
Collector-Base
Cut-Off Current
TA = 150°C
10
A
IC = 0
VEB = 4V
10
nA
IEBO
Emitter Cut-Off Current
VEB = 6V
10
A
ON CHARACTERISTICS
IC = 150mA
IB = 15mA
0.3
VCE(Sat)
(3)
Collector-Emitter
Saturation Voltage
IC = 500mA
IB = 50mA
1.0
V
IC = 150mA
IB = 15mA
0.6
1.2
VBE(Sat)
(3)
Base-Emitter
Saturation Voltage
IC = 500mA
IB = 50mA
2.0
V
IC = 0.1mA
VCE = 10V
50
IC = 1.0mA
VCE = 10V
75
325
IC = 10mA
VCE = 10V
100
TA = -55°C
35
IC = 150mA
VCE = 10V
(1)
100
300
hFE
DC Current Gain
IC = 500mA
VCE = 10V
(1)
30
-
SMALL SIGNAL CHARACTERISTICS
Cobo
Output Capacitance
VCB = 10V
IE = 0
f = 1.0MHz
8
Cibo
Input Capacitance
VEB = 0.5V
IC = 0
f = 1.0MHz
25
pF
|
hfe|
Magnitude of small-
signal, short-circuit
forward current transfer
ratio
IC = 20mA
VCE = 20V
f = 100MHz
2.5
-
hfe
Small Signal Current
Gain
IC = 1.0mA
VCE = 10V
f = 1.0kHz
50
-
(3)
Pulse Width ≤ 300us, δ ≤ 2%
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