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參數(shù)資料
| 型號(hào)： | 2N2222ACSM4 |
| 英文描述： | High Speed Medium Power NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、開(kāi)關(guān)型NPN晶體管（高可靠性、陶瓷表貼封裝）) |
| 中文描述： | 高速中功率NPN開(kāi)關(guān)晶體管氣密六窯業(yè)表面貼裝封裝，高可靠性的應(yīng)用（高速，中等功率，開(kāi)關(guān)型npn型晶體管（高可靠性，陶瓷表貼封裝）） |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 15K |
| 代理商： | 2N2222ACSM4 |
2N2222ACSM4
LA B
S E M E
Prelim. 4/99
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Delay Time
Rise Time
Storage Time
Fall Time
Test Conditions
V
CC
= 30V
I
C1
= 150mA
V
CC
= 30V
I
B1
= I
B2
= 15mA
Min.
Typ.
Max.
10
25
225
60
Unit
ns
ns
ns
ns
t
d
t
r
t
s
t
f
fTis defined as the frequency at which hFEextrapolates to unity.
Parameter
Transition Frequency
Output Capacitance
Input Capacitance
Test Conditions
I
C
= 20mA
V
CE
= 20V
V
CB
= 10V
I
E
= 0
V
BE
= 0.5V
I
C
= 0
I
C
= 1mA
V
CE
= 10V
I
C
= 10mA
V
CE
= 10V
Min.
300
Typ.
Max.
Unit
MHz
pF
pF
Parameter
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cut-off Current (I
C
= 0)
Test Conditions
I
C
= 10mA
I
C
= 10
μ
A
I
E
= 10
μ
A
I
B
= 0
I
E
= 0
T
C
= 125°C
I
C
= 0
V
CE
= 60V
I
C
= 150mA
I
C
= 500mA
I
C
= 150mA
I
C
= 500mA
I
C
= 0.1mA
I
C
= 1mA
I
C
= 10mA
I
C
= 10mA
I
C
= 150mA
I
C
= 150mA
I
C
= 500mA
Min.
40
75
6
Typ.
Max.
Unit
V
V
V
nA
nA
μ
A
nA
nA
I
C
= 0
V
CE
= 60V
V
CB
= 60V
V
EB
= 3V (off)
V
EB
= 3V (off)
I
B
= 15mA
I
B
= 50mA
I
B
= 15mA
I
C
= 50mA
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 1V
V
CE
= 10V
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
V
CEO(sus)*
V
(BR)CBO*
V
(BR)EBO*
I
CEX*
I
CBO*
Collector – Base Cut-off Current
I
EBO*
I
BL*
Emitter Cut-off Current (I
C
= 0)
Base Current
V
CE(sat)*
Collector – Emitter Saturation Voltage
V
BE(sat)*
Base – Emitter Saturation Voltage
h
FE*
DC Current Gain
T
A
= –55°C
10
10
10
10
20
0.3
1
1.2
2
0.6
35
50
75
35
100
50
40
300
V
V
—
f
T
C
ob
C
ib
hfe
Small Signal Current Gain
f = 100MHz
f = 1.0MHz
f = 1.0MHz
f = 1kHz
f = 1kHz
8
30
300
375
50
75
V
BE
= 0.5V (off)
I
B1
= 15mA
I
C
= 150mA
* Pulse test t
p
= 300
μ
s ,
δ ≤
2%
DYNAMIC CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
SWITCHING CHARACTERISTICS (RESISTIVE LOAD)
(Tcase= 25°C unless otherwise stated)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N2222ACSM | HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
| 2N2222 | NPN switching transistors |
| 2N2222 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N2222A | NPN switching transistors |
| 2N2222A | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2222AD | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR NPN SILICON |
| 2N2222AD1 | 制造商:STMicroelectronics 功能描述:2N2222AD1 - Gel-pak, waffle pack, wafer, diced wafer on film |
| 2N2222AD-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR NPN SILICON |
| 2N2222ADC | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR NPN SILICON |
| 2N2222ADC-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR NPN SILICON |
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