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參數(shù)資料
| 型號(hào)： | 2N2222AB-1 |
| 廠商： | MICROSEMI CORP-LOWELL |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SWITCHING TRANSISTOR NPN SILICON |
| 中文描述： | 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 17K |
| 代理商： | 2N2222AB-1 |
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukPrelim. 3/00
LA B
S E M E
2N2222ACSM
Parameter
Delay Time
Rise Time
Storage Time
Fall Time
Test Conditions
V
CC
= 30V
I
C1
= 150mA
V
CC
= 30V
I
B1
= I
B2
= 15mA
Min.
Typ.
Max.
10
25
225
60
Unit
ns
ns
ns
ns
t
d
t
r
t
s
t
f
fTis defined as the frequency at which hFEextrapolates to unity.
Parameter
Transition Frequency
Output Capacitance
Input Capacitance
Test Conditions
I
C
= 20mA
V
CE
= 20V
V
CB
= 10V
I
E
= 0
V
BE
= 0.5V
I
C
= 0
I
C
= 1mA
V
CE
= 10V
I
C
= 10mA
V
CE
= 10V
Min.
300
Typ.
Max.
Unit
MHz
pF
pF
Parameter
Collector
–
Emitter Sustaining Voltage
Collector
–
Base Breakdown Voltage
Emitter
–
Base Breakdown Voltage
Collector Cut-off Current (I
C
= 0)
Test Conditions
I
C
= 10mA
I
C
= 10
m
A
I
E
= 10
m
A
I
B
= 0
I
E
= 0
T
C
= 125
°
C
I
C
= 0
V
CE
= 60V
I
C
= 150mA
I
C
= 500mA
I
C
= 150mA
I
C
= 500mA
I
C
= 0.1mA
I
C
= 1mA
I
C
= 10mA
I
C
= 10mA
I
C
= 150mA
I
C
= 150mA
I
C
= 500mA
Min.
40
75
6
Typ.
Max.
Unit
V
V
V
nA
nA
m
A
nA
nA
I
C
= 0
V
CE
= 60V
V
CB
= 60V
V
EB
= 3V (off)
V
EB
= 3V (off)
I
B
= 15mA
I
B
= 50mA
I
B
= 15mA
I
C
= 50mA
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 1V
V
CE
= 10V
ELECTRICAL CHARACTERISTICS
(Tcase= 25
°
C unless otherwise stated)
V
CEO(sus)*
V
(BR)CBO*
V
(BR)EBO*
I
CEX*
I
CBO*
Collector
–
Base Cut-off Current
I
EBO*
I
BL*
Emitter Cut-off Current (I
C
= 0)
Base Current
V
CE(sat)*
Collector
–
Emitter Saturation Voltage
V
BE(sat)*
Base
–
Emitter Saturation Voltage
h
FE*
DC Current Gain
T
A
=
–
55
°
C
10
10
10
10
20
0.3
1
1.2
2
0.6
35
50
75
35
100
50
40
300
V
V
—
f
T
C
ob
C
ib
hfe
Small Signal Current Gain
f = 100MHz
f = 1.0MHz
f = 1.0MHz
f = 1kHz
f = 1kHz
8
30
300
375
50
75
V
BE
= 0.5V (off)
I
B1
= 15mA
I
C
= 150mA
* Pulse test t
p
= 300
m
s ,
d ￡
2%
DYNAMIC CHARACTERISTICS
(Tcase= 25
°
C unless otherwise stated)
SWITCHING CHARACTERISTICS (RESISTIVE LOAD)
(Tcase= 25
°
C unless otherwise stated)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2222ABC | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR NPN SILICON |
| 2N2222ABC-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR NPN SILICON |
| 2N2222A-BP | 功能描述:兩極晶體管 - BJT 800mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2222ABS | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR NPN SILICON |
| 2N2222ABS-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR NPN SILICON |
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