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參數(shù)資料
| 型號： | 2N2221AX |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 封裝： | HERMETIC SEALED, METAL, TO-18, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 19K |
| 代理商： | 2N2221AX |
2N2221AX
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 4055
Issue 1
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cutoff Current
VCB=50V
IE=0V
10
nA
T
amb=150°C
10
A
IEBO
Emitter Cutoff Current
VEB=3V
IC=0V
10
nA
V(BR)CBO
Collector-Base Breakdown Voltage
IC=10A
IE=0A
60
V
V(BR)CEO*
Collector-Emitter Breakdown Voltage
IC=10mA
IB=0V
30
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE=10A
IC=0V
5
V
VCE(sat)*
Collector-Emitter Saturation Voltage
IC=150mA
IB=15mA
0.4
V
IC=500mA
IB=50mA
1.6
V
VBE(sat)*
Base-Emitter Saturation Voltage
IC=150mA
IB=15mA
1.3
V
IC=500mA
IB=50mA
2.6
V
IC=0.1mA
VCE=10V
20
IC=1mA
VCE=10V
25
IC=10mA
VCE=10V
35
IC=150mA
VCE=10V
40
IC=500mA
VCE=10V
20
hFE*
DC Current Gain
IC=150mA
VCE=1V
20
200
fT
Transition Frequency (f=100MHz)
IC=20mA
VCE=20V
250
MHz
CCBO
Collector-Base Capacitance (f=100kHz)
IE=0A
VCB=10V
8
pF
RthJC
Thermal Resistance Junction-Case
83.3
RthJA
Thermal Resistance Junction-Ambient
300
°C/W
* Pulsed: Pulse duration = 300s, duty cycle = 1%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2221CSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed LCC1 |
| 2N2221DCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Dual Bipolar NPN Devices in a hermetically sealed |
| 2N2222 | 功能描述:兩極晶體管 - BJT NPN Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2222/A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN Switching Transistors |
| 2N2222A | 功能描述:兩極晶體管 - BJT NPN General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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