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參數(shù)資料
| 型號(hào)： | 2N2219JS |
| 廠商： | SEMICOA CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | HERMETIC SEALED, METAL CAN-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 409K |
| 代理商： | 2N2219JS |
Rev. K
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 1
www.SEMICOA.com
2N2219
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N2219J)
JANTX level (2N2219JX)
JANTXV level (2N2219JV)
JANS level (2N2219JS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose
Low power
NPN silicon transistor
Features
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 0400
Reference document:
MIL-PRF-19500/251
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
30
Volts
Collector-Base Voltage
VCBO
60
Volts
Emitter-Base Voltage
VEBO
5
Volts
Collector Current, Continuous
IC
800
mA
Power Dissipation, TA = 25
OC
Derate linearly above 25OC
PT
0.8
4.6
W
mW/
°C
Power Dissipation, TC = 25
OC
Derate linearly above 25OC
PT
3.0
17.0
W
mW/
°C
Operating Junction Temperature
TJ
-55 to +200
°C
Storage Temperature
TSTG
-55 to +200
°C
Semicoa Corporation
Copyright
2010
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