- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368981 > 2N2219A (意法半導(dǎo)體) High Speed Switches(硅平面外延工藝NPN晶體管(用于高速開關(guān))) PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N2219A |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High Speed Switches(硅平面外延工藝NPN晶體管(用于高速開關(guān))) |
| 中文描述： | 高速開關(guān)（硅平面外延工藝npn型晶體管（用于高速開關(guān)）） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 88K |
| 代理商： | 2N2219A |
THERMAL DATA
TO-39
TO-18
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
50
187.5
83.3
300
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 60 V
V
CB
= 60 V
T
case
= 150
o
C
10
10
nA
μ
A
I
CEX
Collector Cut-off
Current (V
BE
= -3V)
Base Cut-off Current
(V
BE
= -3V)
Emitter Cut-off Current
(I
C
= 0)
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Saturation Voltage
V
CE
= 60 V
10
nA
I
BEX
V
CE
= 60 V
20
nA
I
EBO
V
EB
= 3 V
10
nA
I
C
= 10
μ
A
75
V
I
C
= 10 mA
40
V
I
E
= 10
μ
A
6
V
I
C
= 150 mA
I
C
= 500 mA
I
B
= 15 mA
I
B
= 50 mA
0.3
1
V
V
I
C
= 150 mA
I
C
= 500 mA
I
B
= 15 mA
I
B
= 50 mA
0.6
1.2
2
V
V
h
FE
DC Current Gain
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 150 mA
I
C
= 500 mA
I
C
= 150 mA
I
C
= 10 mA
T
amb
= -55
o
C
I
C
= 1 mA
I
C
= 10 mA
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 1 V
V
CE
= 10 V
35
50
75
100
40
50
35
300
h
fe
Small Signal Current
Gain
V
CE
= 10 V
V
CE
= 10 V
f = 1KHz
f = 1KHz
50
75
300
375
f
T
Transition Frequency
I
C
= 20 mA
f = 100 MHz
I
C
= 0
V
CE
= 20 V
300
MHz
C
EBO
Emitter Base
Capacitance
Collector Base
Capacitance
Real Part of Input
Impedance
V
EB
= 0.5 V
f = 100KHz
25
pF
C
CBO
I
E
= 0
V
CB
= 10 V
f = 100 KHz
8
pF
R
e(hie)
I
C
= 20 mA
f = 300MHz
V
CE
= 20 V
60
Pulsed: Pulse duration = 300
μ
s, duty cycle
≤
1 %
2N2219A/2N2222A
2/8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N2219 | CABLE TIE STANDARD NAT 15.3,1 |
| 2N2219A | NPN switching transistors |
| 2N2219 | NPN switching transistors |
| 2N2219 | HIGH-SPEED SWITCHES |
| 2N2219A | NPN Silicon Planar Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2219A | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-5 |
| 2N2219A_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SPEED SWITCHES |
| 2N2219A_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:SMALL SIGNAL BIPOLAR NPN SILICON |
| 2N2219A-B | 功能描述:兩極晶體管 - BJT 800mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2219A-BP | 功能描述:兩極晶體管 - BJT 800mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。