參數(shù)資料
型號: 2N2219A-BP
廠商: MICRO COMMERCIAL COMPONENTS
元件分類: 小信號晶體管
英文描述: 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 3/10頁
文件大?。?/td> 327K
代理商: 2N2219A-BP
2N2219A
Electrical Characteristics (TA = 25
°C unless otherwise noted)
OFF CHARACTERISTIC
SYMBOL
MIN
MAX
UNIT
Collector - Emitter Breakdown Voltage
(1)
V(BR)CEO
( IC = 10 mA dc,
IB = 0 )
50
Vdc
Collector - Base Breakdown Voltage
V(BR)CBO
( IC = 10
Adc,
IE = 0 )
75
Vdc
Emitter - Base Breakdown Voltage
V(BR)EBO
( IE = 10
Adc,
IC = 0 )
6
Vdc
Collector - Emitter Cutoff Current
ICES
( VCE = 50 Vdc )
10
nAdc
Collector - Base
Cutoff
Current
ICBO
( VCB = 60 Vdc,
IE = 0 )
10
nAdc
( VCB = 60 Vdc,
IE = 0,
TA = 150
°°C )
10
Adc
Emitter - Base
Cutoff
Current
IEBO
( VEB = 4 Vdc )
10
nAdc
( VEB = 6 Vdc )
10
Adc
ON CHARACTERISTIC
SYMBOL
MIN
MAX
UNIT
DC Current Gain
hFE
( IC = 0.1 mA dc, VCE = 10 Vdc )
(1)
50
( IC =
1 mA dc, VCE = 10 Vdc )
(1)
75
325
( IC = 10 mA dc, VCE = 10 Vdc )
(1)
100
( IC = 150 mA dc, VCE = 10 Vdc )
(1)
100
300
( IC = 500 mA dc, VCE = 10 Vdc )
(1)
30
( IC = 10 mA dc,
VCE = 10 Vdc, TJ = -55
°°C ) (1)
35
Collector - Emitter Saturation Voltage
VCE(sat)
( IC = 150 mAdc, IB = 15 mAdc )
(1)
0.3
Vdc
( IC = 500 mAdc, IB = 50 mAdc )
(1)
1.0
Vdc
Base
-
Emitter Saturation Voltage
VBE(sat)
( IC = 150 mAdc, IB = 15 mAdc )
(1)
0.6
1.2
Vdc
( IC = 500 mAdc, IB = 50 mAdc )
(1)
2.0
Vdc
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤.2%
MCC
Revision: A
2011/01/01
TM
Micro Commercial Components
www.mccsemi.com
2 of 10
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