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參數(shù)資料
| 型號(hào)： | 2N1711 |
| 廠商： | Boca Semiconductor Corp. |
| 英文描述： | GENERAL PURPOSE TRANSISTOR NPN SILICON |
| 中文描述： | 一般用途晶體管NPN硅 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | 2N1711 |
ELECTRICAL CHARACTERISTICS
(T
amb
= 25
°
C unless otherwise specified)
Symbol
I
CBO
Parameter
Test Conditions
V
CB
= 60 V
V
CB
= 60 V
Min.
Typ.
Max.
10
10
10
5
Unit
nA
μ
A
nA
nA
Collector Cutoff Current
(I
E
= 0)
Emitter Cutoff Current
(I
C
= 0)
Collector-base Breakdown
Voltage
Collector-emitter
Breakdown Voltage
(R
BE
≤
10
)
Emitter-base Breakdown
Voltage (I
C
= 0)
Collector-emitter
Saturation Voltage
Base-emitter Saturation
Voltage
DC Current Gain
T
amb
= 150
°
C
for
2N1613
for
2N1711
I
EBO
V
EB
= 5 V
V
(BR) CBO
I
C
= 0.1 mA
75
V
V
(BR)CER
*
I
C
= 10 mA
50
V
V
(BR) EBO
I
E
= 0.1 mA
7
V
V
CE (sat )
*
I
C
= 150 mA
I
B
= 15 mA
0.5
1.5
V
V
BE (sat)
*
I
C
= 150 mA
I
B
= 15 mA
0.95
1.3
V
h
FE
*
for
2N1613
I
C
= 0.01 mA
I
C
= 0.1 mA
I
C
= 10 mA
I
C
= 150 mA
I
C
= 500 mA
I
C
= 10 mA
T
amb
= –55
°
C
for
2N1711
I
C
= 0.01 mA
I
C
= 0.1 mA
I
C
= 10 mA
I
C
= 150 mA
I
C
= 500 mA
I
C
= 10 mA
T
amb
= 55
°
C
for
2N1613
I
C
= 1 mA
f = 1 kHz
for
2N1711
I
C
= 1 mA
f = 1 kHz
I
C
= 50 mA
f = 20 MHz
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
20
35
40
20
20
35
50
80
80
55
35
120
h
FE
*
DC Current Gain
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
20
35
60
80
130
130
75
65
300
h
fe
Small Signal Current Gain
V
CE
= 10 V
V
CE
= 10 V
30
70
70
135
150
300
f
t
Transition Frequency
V
CE
= 10 V
for
2N1613
for
2N1711
60
70
80
100
MHz
MHz
C
EBO
Emitter-base Capacitance
I
C
= 0
f = 1 MHz
I
E
= 0
f = 1 MHz
V
EB
= 0.5 V
50
80
pF
C
CBO
Collector-base
Capacitance
V
CB
= 10 V
18
25
pF
* Pulsed : pulse duration = 300
μ
s, duty cycle = 1 %.
THERMAL DATA
R
th j-case
R
th j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
58
219
°
C/W
°
C/W
2N1613-2N1711
2/5
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