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參數(shù)資料
| 型號： | 2N1616.MODR1 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-61 |
| 封裝： | METAL PACKAGE-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 22K |
| 代理商： | 2N1616.MODR1 |
2SA2121
2005-07-27
2
Electrical Characteristics (Tc = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 200 V, IE = 0
―
5.0
A
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
5.0
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
200
―
V
hFE (1)
(Note 1)
VCE = 5 V, IC = 1 A
55
―
160
DC current gain
hFE (2)
VCE = 5 V, IC = 8 A
35
60
―
Collector-emitter saturation voltage
VCE (sat)
IC = 10 A, IB = 1 A
―
1.5
3.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 8 A
―
1.0
1.5
V
Transition frequency
fT
VCE = 5 V, IC = 1 A
―
25
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
470
―
pF
Note 1: hFE(1) classification R: 55 to 110, O: 80 to 160
Marking
2SA2121
TOSHIBA
JAPAN
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
Characteristisc
indicator
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N1617 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:HIGH POWER NPN SILICON TRANSISTOR |
| 2N1617A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | TO-210AC |
| 2N1618 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:NPN SILICON TRANSISTOR |
| 2N1618A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | TO-210AC |
| 2N1620 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:Si NPN Power BJT, I(C) = S A to 9.9 A |
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