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參數(shù)資料
| 型號： | 2N1613L |
| 英文描述： | 68HC11/Bidirectional-Compatible µP Reset Circuit |
| 中文描述： | NPN晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2N1613L |
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 181
Devices
Qualified Level
2N718A
2N1613
2N1613L
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
30
75
7.0
500
0.5
0.8
1.8
3.0
-55 to +175
Unit
Vdc
Vdc
Vdc
mAdc
W
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 4.57 mW/
0
C for 2N1613, L and 2.85 mW/
0
C for 2N718A for T
A
> +25
0
C
2) Derate linearly 17.2 mW/
0
C for 2N1613, L and 10.3 mW/
0
C for 2N718A for T
C
> +25
0
C
2N718A
2N1613, L
2N718A
2N1613, L
P
T
T
J
,
T
stg
0
C
Symbol
Max.
97
58
Unit
2N718A
2N1613, L
R
θ
JC
0
C/W
TO-18 (TO-206AA)*
2N718A
TO-39 (TO-205AD)*
2N1613
TO-5*
2N1613L
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 30 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc, R
BE
= 10
Collector-Base Cutoff Current
V
CB
= 60 Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
V
(BR)CEO
30
50
Vdc
V
(BR)CER
I
CBO
I
EBO
Vdc
η
Adc
η
Adc
10
10
120101
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