參數(shù)資料
型號(hào): 2N1309
廠商: AMERICAN MICROSEMICONDUCTOR INC
元件分類(lèi): 小信號(hào)晶體管
英文描述: 300 mA, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-5
封裝: TO-5, 3 PIN
文件頁(yè)數(shù): 1/1頁(yè)
文件大?。?/td> 239K
代理商: 2N1309
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2N1309 Information
Category Transistors
2N1309 Specifications
Military/High-Rel : N
V(BR)CEO (V) :
V(BR)CBO (V) : 30
I(C) Max. (A) : 300m
Absolute Max. Power Diss. (W) : 150m
Maxim um Operating Tem p (шC) : 85х
I(CBO) Max. (A) : 6.0uШ
@V(CBO) (V) (Test Condition) : 25
h(FE) Min. Current gain. : 80
h(FE) Max. Current gain. :
@I(C) (A) (Test Condition) : 10m
@V(CE) (V) (Test Condition) : 1.0
h(fe) Min. SS Current gain. :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
f(T) Min. (Hz) Transition Freq : 15M
@I(C) (A) (Test Condition) : 1.0m
@V(CE) (V) (Test Condition) : 5.0
C(obo) (Max) (F) : 20p
@V(CB) (V) (Test Condition) : 5.0
@Freq. (Hz) (Test Condition) : 1.0M
Package Style : TO-5
Mounting Style : T
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