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參數(shù)資料
| 型號： | 2N1132L |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | LOW POWER PNP SILICON TRANSISTOR |
| 中文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封裝： | TO-5, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2N1132L |
TECHNICAL DATA
LOW POWER PNP SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 177
Devices
Qualified Level
2N1131
2N1131L
2N1132
2N1132L
JAN
JANTX
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
All Units
40
50
5.0
600
0.6
2.0
-65 to +200
Units
Vdc
Vdc
Vdc
mAdc
W
W
°
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Operating & Storage Temperature Range
1) Derate linearly 3.4 mW/
0
C for T
A
≥
+25
0
C
2)
Derate linearly 11.4 mW/
0
C for T
C
≥
+25
0
C
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
T
op
,
T
j
TO-39*
2N1131, 2N1132
TO-5*
2N1311L, 2N1312L
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Base Breakdown Voltage
I
C
= 10
μ
Adc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
Collector-Emitter Cutoff Current
V
CE
= 50 Vdc, R
BE
≤
10 ohms
Collector-Base Cutoff Current
V
CB
= 50 Vdc
V
CB
= 30 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
V
(BR)CEO
40
Vdc
V
(BR)CBO
50
Vdc
I
EBO
100
μ
Adc
I
CER
10
mAdc
I
CBO
10
1.0
μ
Adc
120101
Page 1 of 2
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| 2N1136 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3 |
| 2N1136A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 6A I(C) | TO-3 |
| 2N1136B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 6A I(C) | TO-3 |
| 2N1137 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3 |
| 2N1137A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 6A I(C) | TO-3 |
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