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參數(shù)資料
| 型號： | 2N1132G4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | HERMATIC SEALED, METAL, TO-39, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 122K |
| 代理商： | 2N1132G4 |
SILICON PLANAR
PNP TRANSISTOR
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8069
Issue 1
Page 1 of 3
2N1132
High Speed Switching
Hermetic TO-39 Metal package.
Ideally suited for Small Signal General Purpose
and Switching Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-50V
VCEO
Collector – Emitter Voltage
-40V
VEBO
Emitter – Base Voltage
-5V
IC
Continuous Collector Current
-600mA
PD
Total Power Dissipation at
TA = 25°C
600mW
Derate Above 25°C
3.4mW/°C
PD
Total Power Dissipation at
TC = 25°C
2W
Derate Above 25°C
11.4mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
Min.
Typ.
Max.
Units
RθJA
Thermal Resistance, Junction To Ambient
292
°C/W
RθJC
Thermal Resistance, Junction To Case
87.5
°C/W
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| 2N1132-JQR-BG4 | 600 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
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| 2N1136 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3 |
| 2N1136A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 6A I(C) | TO-3 |
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