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參數(shù)資料
| 型號： | 2A3A |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開關(guān)穩(wěn)壓器 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 108K |
| 代理商： | 2A3A |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
2A3/2A3A
0.3 Watts, 20 Volts, Class A
Linear to 2000 MHz
GENERAL DESCRIPTION
The 2A3 is a COMMON EMITTER transistor capable of providing up to
0.3 Watt of Class A, RF output power to 2000 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness.
CASE OUTLINE
2A3 - 55ET, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 3.5 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 300 mAmps
Maximum Temperatures
Storage Temperature - 65 to + 150 C
Operating Junction Temperature + 200 C
2A3A - 55EU, STYLE 2
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
Ft
VSWR
Power Out (<1.0 db gain comp)
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance
F = 2000 MHz
Ic = 140 mA
Vcc = 20 Volts
Vce = 20 V, Ic = 140 mA
0.3
7.7
3.4
0.4
8.5
3.7
0.05
30:1
Watts
Watts
dB
GHz
BVebo
BVces
BVceo
h
Cob
θ
jc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
DC Current Gain
Capacitance
Thermal Resistance
Ie = 1 mA
Ic = 25 mA
Ic = 25 mA
Vce = 5 V, Ic = 100 mA
Vcb = 28V, f = 1 MHz
3.5
45
22
20
2.0
45
3.0
50
Volts
Volts
Volts
pF
C/W
o
Issue August 1996
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