參數(shù)資料
型號: 2A07
廠商: DIODES INC
元件分類: 參考電壓二極管
英文描述: MC24E3 Std. Unit
中文描述: 2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 1/2頁
文件大小: 57K
代理商: 2A07
DS29008 Rev. B-2
1 of 2
2A01-2A07
2A01 - 2A07
2.0A RECTIFIER
Features
Diffused Junction
High Current Capability and Low Forward
Voltage Drop
Surge Overload Rating to 70A Peak
Plastic Material - UL Flammability
Classification 94V-0
A
A
B
C
D
DO-15
Min
Dim
A
B
C
D
Max
25.40
5.50
7.62
0.686
0.889
2.60
3.6
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.4 grams (approx)
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
2A01
2A02
2A03
2A04
2A05
2A06
2A07
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
50
100
200
400
600
800
1000
V
35
70
140
280
420
560
700
V
@ T
A
= 55°C
I
O
2.0
A
I
FSM
70
A
@ I
F
= 2.0A
@T
= 25°C
@ TA = 100°C
V
FM
1.1
5.0
50
V
Peak Reverse Leakage Current
at Rated DC Blocking Voltage
I
2
t Rating for Fusing (t < 8.3ms)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
I
RM
μA
I
2
t
C
j
17.5
15
60
A
2
s
pF
K/W
R
JA
T
j,
T
STG
-65 to +150
°C
Notes:
1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.
相關(guān)PDF資料
PDF描述
2A01 2.0 AMPS. SILICON RECTIFIERS
2A02 2.0 AMPS. SILICON RECTIFIERS
2A03 2.0 AMPS. SILICON RECTIFIERS
2A04 2.0 AMPS. SILICON RECTIFIERS
2A05 2.0 AMPS. SILICON RECTIFIERS
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