參數(shù)資料
型號: 29MT050XH
元件分類: JFETs
英文描述: 46 A, 500 V, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: MTP, 12 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 88K
代理商: 29MT050XH
29MT050XH
Target Data 05/01
2
V(BR)DSS
Drain-to-SourceBreakdownVoltage
500
V
VGS = 0V, IC = 250A
V(BR)DSS/ TemperatureCoeff.of
0.6
V/°C ID = 1mA, reference to TJ = 25°C
TJ
Breakdown Voltage
RDS(ON)
StaticDrain-to-SourceOn-Resistance
0.087
VGS = 15V, ID = 28A
(4)
VGS(th)
Gate Threshold Voltage
3
5
V
VDS = VGS, ID = 250A
IDSS
Drain-to-Source LeakageCurrent
50
A
VDS = 500V, VGS = 0V
2mA
VDS = 400V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source ForwardLeakage
100
nA
VGS = 30V
Gate-to-Source ReverseLeakage
- 100
VGS = - 30V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
gfs
ForwardTransconductance
21
S
VDS = 50V, ID = 46A
Qg
TotalGateCharge
380
nC
ID = 46A
Qgs
Gate-to-Source Charge
80
VDS = 400V
Qgd
Gate-to-Drain("Miller") Charge
190
VGS = 10V
(4)
Ciss
Input Capacitance
8110
pF
VGS = 0V
Coss
Output Capacitance
960
VDS = 25V
Crss
ReverseTransfer Capacitance
130
f = 1.0 MHz
Coss
Output Capacitance
11200
VGS = 0V, VDS = 1.0V, f = 1.0 MHz
Coss
Output Capacitance
240
VGS = 0V, VDS = 400V, f = 1.0 MHz
Coss eff. EffectiveOutput Capacitance
420
VGS = 0V, VDS = 0V to 400V
(5)
Dynamic Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
IS
ContinuousSourceCurrent
46
A
MOSFET symbol
(Body Diode)
showing the
ISM
PulsedSourceCurrent
180
integral reverse
(Body Diode)
(1)
p-n junction diode
VSD
DiodeForwardVoltage
1.5
V
TJ = 25°C, IS = 46A, VGS = 0V
(4)
trr
ReverseRecoveryTime
170
ns
TJ = 25°C, IF = 46A
Qrr
ReverseRecoveryCharge
0.8
C
di/dt = 100A/s
(4)
IRRM
ReverseRecoveryCurrent
8.4
A
Diode Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Notes:
(1) Repetitive rating; pulse width limited by
max. junction temperature
(2) Starting T
J = 25°C, L = 0.86mH, RG = 25
I
AS = 46A
(3) I
SD ≤ 46A, di/dt ≤ 367A/s, VDD≤ V(BR)DSS,
T
J ≤ 150°C
S
D
G
(4) Pulse width
≤ 400s; duty cycle ≤ 2%
(5) C
oss eff. is a fixed capacitance that gives the
same charging time as C
oss while VDS is rising
from 0 to 80% V
DSS
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