參數(shù)資料
型號(hào): 29C512
廠商: Atmel Corp.
英文描述: 512K 64K x 8 5-volt Only CMOS Flash Memory
中文描述: 為512k 64KX8的5伏只有閃存的CMOS
文件頁數(shù): 3/18頁
文件大?。?/td> 284K
代理商: 29C512
3
0456H–FLASH–2/05
AT29C512
3.
Block Diagram
4.
Device Operation
4.1
Read
The AT29C512 is accessed like an EPROM. When CE and OE are low and WE is high, the data
stored at the memory location determined by the address pins is asserted on the outputs. The
outputs are put in the high impedance state whenever CE or OE is high. This dual-line control
gives designers flexibility in preventing bus contention.
4.2
Byte Load
Byte loads are used to enter the 128 bytes of a sector to be programmed or the software codes
for data protection. A byte load is performed by applying a low pulse on the WE or CE input with
CE or WE low (respectively) and OE high. The address is latched on the falling edge of CE or
WE, whichever occurs last. The data is latched by the first rising edge of CE or WE.
4.3
Program
The device is reprogrammed on a sector basis. If a byte of data within a sector is to be changed,
data for the entire sector must be loaded into the device. Any byte that is not loaded during the
programming of its sector will be indeterminate. Once the bytes of a sector are loaded into the
device, they are simultaneously programmed during the internal programming period. After the
first data byte has been loaded into the device, successive bytes are entered in the same man-
ner. Each new byte to be programmed must have its high-to-low transition on WE (or CE) within
150 μs of the low-to-high transition of WE (or CE) of the preceding byte. If a high-to-low transi-
tion is not detected within 150 μs of the last low-to-high transition, the load period will end and
the internal programming period will start. A7 to A15 specify the sector address. The sector
address must be valid during each high-to-low transition of WE (or CE). A0 to A6 specify the
byte address within the sector. The bytes may be loaded in any order; sequential loading is not
required. Once a programming operation has been initiated, and for the duration of t
WC
, a read
operation will effectively be a polling operation.
相關(guān)PDF資料
PDF描述
29C516E 97-3106A14S-5S
29C532E 5-Pin, Multiple-Input, Programmable Reset ICs
29C93 ISDN, Other/Special/Miscellaneous
29F001B-12 1M-BIT [128K x 8] CMOS FLASH MEMORY
29F001B-90 1M-BIT [128K x 8] CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29C516E 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:16 Bit Flow Through EDAC Error Detection And Correction unit
29C516E_07 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:16-Bit Flow-Through EDAC Error Detection And Correction unit
29C532E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Error Detection & Correction (EDAC)
29C60AJC 制造商:Rochester Electronics LLC 功能描述:- Bulk
29C60APC 制造商:Rochester Electronics LLC 功能描述:- Bulk