參數(shù)資料
型號： 29109BRA
廠商： HARRIS SEMICONDUCTOR
元件分類： DRAM
英文描述： 16K x 1 Asynchronous CMOS Static RAM
中文描述： 16K X 1 STANDARD SRAM, 70 ns, CDIP20
文件頁數(shù)： 3/7頁
文件大?。?/td> 41K
代理商： 29109BRA
6-3
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V
Input or Output Voltage Applied for all grades . . . . . -0.3V to V
CC
+0.3V
Typical Derating Factor. . . . . . . . . . . . . . . .5mA/MHz Increase in ICCOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Information
Thermal Resistance (Typical)
CERDIP Package. . . . . . . . . . . . . . . . . .
CLCC Package. . . . . . . . . . . . . . . . . . . .
Maximum Storage Temperature Range. . . . . . . . . . . . .-65
o
C to +150
o
C
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . +300
o
C
θ
JA
θ
JC
66
o
C/W
75
o
C/W
13
o
C/W
18
o
C/W
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26256 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range
HM-65262B-9, HM-65262-9, HM-65262C-9 . . . . .-40
o
C to +85
o
C
DC Electrical Specifications
V
CC
= 5V
±
10%; T
A
= -40
o
C to +85
o
C (HM-65262B-9, HM-65262-9, HM-65262C-9)
SYMBOL
PARAMETER
LIMITS
UNITS
TEST CONDITIONS
MIN
MAX
ICCSB1
Standby Supply Current
-od
50
μ
A
HM-65262B-9, HM-65262-9, IO = 0mA,
E = V
CC
-0.3V, V
CC
= 5.5V
-
900
μ
A
HM-65262C-9, IO = 0mA,
E = V
CC
-0.3V, V
CC
= 5.5V
ICCSB
Standby Supply Current
-
5
mA
E = 2.2V, IO = 0mA, V
CC
= 5.5V
ICCEN
Enabled Supply Current
-
50
mA
E = 0.8V, IO = 0mA, V
CC
= 5.5V
ICCOP
Operating Supply Current (Note 1)
-
50
mA
E = 0.8V, IO = 0mA, f = 1MHz,
V
CC
= 5.5V
ICCDR
Data Retention Supply Current
-
20
μ
A
HM-65262B-9, HM-65262-9,
V
CC
= 2.0V, E = V
CC
-
400
μ
A
HM-65262C-9, V
CC
= 2.0V, E = V
CC
ICCDR1
Data Retention Supply Current
-
30
μ
A
HM-65262B-9, HM-65262-9,
V
CC
= 3.0V, E = V
CC
-
550
μ
A
HM-65262C-9, V
CC
= 3.0V, E = V
CC
VCCDR
Data Retention Supply Voltage
2.0
-
V
II
Input Leakage Current
-1.0
+1.0
μ
A
VI = V
CC
or GND, V
CC
= 5.5V
IOZ
Output Leakage Current
-1.0
+1.0
μ
A
VIO = V
CC
or GND, V
CC
= 5.5V
VIL
Input Low Voltage
-0.3
0.8
V
V
CC
= 4.5V
VIH
Input High Voltage
2.2
V
CC
+0.3
V
V
CC
= 5.5V
VOL
Output Low Voltage
-
0.4
V
IO = 8.0mA, V
CC
= 4.5V
VOH1
Output High Voltage
2.4
-
V
IO = -4.0mA, V
CC
= 4.5V
VOH2
Output High Voltage (Note 2)
V
CC
-0.4
-
V
IO = -100
μ
A, V
CC
= 4.5V
Capacitance
T
A
= +25
o
C
SYMBOL
PARAMETER
MAX
UNITS
TEST CONDITIONS
CI
Input Capacitance (Note 2)
10
pF
f = 1MHz, All measurements are
referenced to device GND
CIO
Input/Output Capacitance (Note 2)
12
pF
NOTES:
1. Typical derating 5mA/MHz increase in ICCOP.
2. Tested at initial design and after major design changes.
HM-65262
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