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參數(shù)資料
| 型號： | 28M0WC |
| 廠商： | MICROSEMI CORP-LOWELL |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 60V 300mA MONOLITHIC DIODE ARRAY |
| 中文描述： | 0.3 A, 16 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | WAFER-12 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 18K |
| 代理商： | 28M0WC |
A Microsemi Company
580 Pleasant St.
Watertown, MA 02472
Phone: 617-924-9280
Fax: 617-924-1235
DIE SPECIFICATION
60V 300mA
MONOLITHIC DIODE ARRAY
FEATURES:
TWO EIGHT DIODE CORE DRIVER
trr < 20 ns
RUGGED AIR-ISOLATED CONSTRUCTION
LOW REVERSE LEAKAGE CURRENT
Absolute Maximum Ratings:
Symbol
Parameter
Limit
Unit
VBR(R) *1 *2 Reverse Breakdown Voltage
IO *1
Continuous Forward Current
IFSM *1 Peak Surge Current (tp= 1/120 s)
Top
Operating Junction Temperature Range
Tstg
Storage Temperature Range
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
60
300
500
Vdc
mAdc
mAdc
-65 to +150 °C
-65 to +200 °C
Symbol Parameter
Conditions
Min
Max
Unit
BV1
Vf1
Vf2
IR1
Ct
tfr
trr
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
Packaging Options:
W: Wafer (100% probed) U: Wafer (sample probed)
D: Chip (Waffle Pack) B: Chip (Vial)
V: Chip (Waffle Pack, 100% visually inspected) X: Other
Breakdown Voltage
Forward Voltage
Forward Voltage
Reverse Current
Capacitance (pin to pin)
Forward Recovery Time
Reverse Recovery Time
IR = 10uAdc
IF = 100mAdc *1
IF = 500mAdc *1
VR = 40 Vdc
VR = 0 Vdc ; f = 1 MHz
IF = 500mAdc
IF = IR = 200mAdc, irr = 20 mAdc, RL = 100 ohms
60
1
Vdc
Vdc
uAdc
pF
ns
ns
1.5
0.1
8.0
40
20
Sertech reserves the right to make changes to any product design, specification or other information at any time without prior
notice.
MSC1025.PDF Rev - 12/3/98
Metallization Options:
Standard: Al Top / Au Backside (No Dash #)
Processing Options:
Standard: Capable of JANTXV application (No Suffix)
Suffix C: Commercial
Suffix S: Capable of S-Level equivalent applications
ORDERING INFORMATION
PART #: 28M0_ _- _
First Suffix Letter: Packaging Option
Second Suffix Letter: Processing Option
Dash #: Metallization Option
Electrical Characteristics (Per Diode) @ 25°C unless otherwise specified
28M0
J
A
C
C
A
J
J
J
J
J
J
J
.061"
.054"
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