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| 型號(hào)： | 28LV64 |
| 元件分類： | EEPROM |
| 英文描述： | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| 中文描述： | 該CAT24FC02是一個(gè)2 KB的EEPROM的國(guó)內(nèi)256個(gè)8位每字舉辦的串行CMOS |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 527K |
| 代理商： | 28LV64 |
CAT28LV64
3
Doc. No. 1010, Rev. D
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55
°
C to +125
°
C
Storage Temperature....................... –65
°
C to +150
°
C
Voltage on Any Pin with
Respect to Ground
(2)
........... –2.0V to +V
CC
+ 2.0V
V
CC
with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25
°
C)................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300
°
C
Output Short Circuit Current
(3)
........................ 100 mA
RELIABILITY CHARACTERISTICS
Symbol
Parameter
Min.
Max.
Units
Test Method
N
END(1)
Endurance
10
5
Cycles/Byte
MIL-STD-883, Test Method 1033
T
DR(1)
Data Retention
100
Years
MIL-STD-883, Test Method 1008
V
ZAP(1)
ESD Susceptibility
2000
Volts
MIL-STD-883, Test Method 3015
I
LTH(1)(4)
Latch-Up
100
mA
JEDEC Standard 17
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+0.5V, which may overshoot to V
CC
+2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to V
CC
+1V.
MODE SELECTION
Mode
CE
WE
OE
I/O
Power
Read
L
H
L
D
OUT
ACTIVE
Byte Write (WE Controlled)
L
H
D
IN
ACTIVE
Byte Write (CE Controlled)
L
H
D
IN
ACTIVE
Standby, and Write Inhibit
H
X
X
High-Z
STANDBY
Read and Write Inhibit
X
H
H
High-Z
ACTIVE
CAPACITANCE
T
A
= 25
°
C, f = 1.0 MHz
Symbol
Test
Max.
Units
Conditions
C
I/O(1)
Input/Output Capacitance
10
pF
V
I/O
= 0V
C
IN(1)
Input Capacitance
6
pF
V
IN
= 0V
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