參數(shù)資料
型號(hào): 28LV011RT2FE-25
廠商: Maxwell Technologies, Inc
元件分類: EEPROM
英文描述: 3.3V 1 Megabit (128K x 8-Bit) EEPROM
中文描述: 3.3V的1兆位(128K的× 8位)的EEPROM
文件頁數(shù): 4/19頁
文件大小: 305K
代理商: 28LV011RT2FE-25
M
4
All data sheets are subject to change without notice
2002 Maxwell Technologies
All rights reserved.
3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV011
05.28.02 Rev 2
T
ABLE
7. 28LV011 AC C
HARACTERISTICS
FOR
R
EAD
O
PERATION1
(V
CC
= 3.3V ± 10%, T
A
= -55
TO
+125 °C
UNLESS
OTHERWISE
SPECIFIED
)
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including
scope and jig); reference levels for measuring timng - 0.8V/1.8V.
2.
t
DF
and t
DFR
is defined as the time at which the output becomes an open circuit and data is no longer driven.
P
ARAMETER
T
EST
C
ONDITIONS
S
UBGROUPS
S
YMBOL
M
IN
M
AX
U
NIT
Functional Test
Verify Truth Table
7, 8A, 8B
All
Address Access Time
-200
-250
CE = OE = V
IL
, WE = V
IH
9, 10, 11
t
ACC
--
--
200
250
ns
Chip Enable Access Time
-200
-250
OE = V
IL
, WE = V
IH
9, 10, 11
t
CE
--
--
200
250
ns
Output Enable Access Time
-200
-250
CE = V
IL
, WE = V
IH
9, 10, 11
t
OE
0
0
110
120
ns
Output Hold to Address Change
-200
-250
CE = OE = V
IL
, WE = V
IH
9, 10, 11
t
OH
0
0
--
--
ns
Output Disable to High-Z
2
-200
-250
CE = V
IL
, WE = V
IH
CE = OE = V
IL
, WE = V
IH
9, 10, 11
t
DF
0
0
50
50
ns
Output Disable to High-Z
-200
-250
CE = V
IL
, WE = V
IH
CE = OE = V
IL
, WE = V
IH
9, 10, 11
t
DFR
0
0
300
350
ns
RES to Output Delay
3
-200
-250
3. Guaranteed by design.
CE = OE = V
IL
WE = V
IH
9, 10, 11
t
RR
0
0
525
550
ns
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