參數(shù)資料
型號(hào): 28LV011RT1FI-25
廠商: Maxwell Technologies, Inc
元件分類: EEPROM
英文描述: 3.3V 1 Megabit (128K x 8-Bit) EEPROM
中文描述: 3.3V的1兆位(128K的× 8位)的EEPROM
文件頁(yè)數(shù): 6/19頁(yè)
文件大?。?/td> 305K
代理商: 28LV011RT1FI-25
M
6
All data sheets are subject to change without notice
2002 Maxwell Technologies
All rights reserved.
3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV011
05.28.02 Rev 2
Byte Load Cycle
-200
-250
9, 10, 11
t
BLC
1
1
30
30
μs
Data Latch Time
2
-200
-250
9, 10, 11
t
DL
700
750
--
--
ns
Byte Load Window
2
-200
-250
9, 10, 11
t
BL
100
100
--
--
μs
Time to Device Busy
-200
-250
9, 10, 11
t
DB
100
120
--
--
ns
Write Start Time
-200
-250
9, 10, 11
t
DW
250
250
--
--
ns
RES to Write Setup Time
2
-200
-250
9, 10, 11
t
RP
100
100
--
--
μs
V
CC
to RES Setup Time
2
-200
-250
9, 10, 11
t
RES
1
1
--
--
μs
1. t
WC
must be longer than this value unless polling techniques or RDY/BSY are used. This device automatically completes the
internal write operation within this value.
2. Guaranteed by design.
T
ABLE
9. 28LV011 M
ODE
S
ELECTION1,2
M
ODE
CE
OE
WE
RES
RDY/BUSY
I/O
Read
V
IL
V
IH
V
IL
V
IL
X
V
IL
X
V
IH
X
V
H
X
High-Z
D
OUT
High-Z
Standby
High-Z
Write
V
IH
V
IH
X
V
IL
V
IH
V
IH
X
V
H
V
H
X
High-Z --> V
OL
High-Z
D
IN
Deselect
High-Z
Write Inhibit
--
--
X
V
IL
V
IL
X
X
--
--
Data Polling
V
IL
X
V
IH
X
V
H
V
IL
V
OL
High-Z
Data Out (I/O7)
Program
High-Z
1. X = Dont care.
2. Refer to the recommended DC operating conditions.
T
ABLE
8. 28LV011 AC E
LECTRICAL
C
HARACTERISTICS
FOR
E
RASE
AND
W
RITE
O
PERATIONS
(V
CC
= 3.3V ± 10%, T
A
= -55
TO
+125 °C
UNLESS
OTHERWISE
SPECIFIED
)
P
ARAMETER
S
UBGROUPS
S
YMBOL
M
IN
M
AX
U
NIT
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