參數(shù)資料
型號: 28LV010RT4DS-20
廠商: MAXWELL TECHNOLOGIES
元件分類: PROM
英文描述: 3.3V 1 Megabit (128K x 8-Bit) EEPROM
中文描述: 128K X 8 EEPROM 3V, 200 ns, DIP32
封裝: DIP-32
文件頁數(shù): 4/20頁
文件大小: 363K
代理商: 28LV010RT4DS-20
M
4
Alldatasheetsaresubjecttochangewithoutnotice
2001MaxwellTechnologies
Allrightsreserved.
3.3V 1Megabit(128K x8-Bit)EEPROM
28LV010
03.14.03REV 6
T
ABLE
7.28LV010AC C
HARACTERISTICS FOR
R
EAD
O
PERATION1
(V
CC
=3.3V ± 10%, T
A
=-55
TO
+125°C
UNLESS OTHERWISE SPECIFIED
)
1. Testconditions:Inputpulselevels-0.4V to2.4V;inputriseandfalltimes<20ns;outputload-1TTLgate+100pF (including
scopeandjig);referencelevelsformeasuringtimng-0.8V/1.8V.
2.
t
DF
andt
DFR
isdefinedasthetimeatwhichtheoutputbecomesanopencircuitanddataisnolongerdriven.
P
ARAMETER
T
EST
C
ONDITIONS
S
YMBOL
S
UBGROUPS
M
IN
M
AX
U
NIT
AddressAccessTime
-200
-250
CE =OE =V
IL
, WE =V
IH
t
ACC
9, 10, 11
--
--
200
250
ns
ChipEnableAccessTime
-200
-250
OE =V
IL
, WE =V
IH
t
CE
9, 10, 11
--
--
200
250
ns
OutputEnableAccessTime
-200
-250
CE =V
IL
, WE =V
IH
t
OE
9, 10, 11
0
0
110
120
ns
OutputHoldtoAddressChange
-200
-250
CE =OE =V
IL
, WE =V
IH
t
OH
9, 10, 11
0
0
--
--
ns
OutputDisabletoHigh-Z
2
-200
-250
CE =V
IL
, WE =V
IH
t
DF
9, 10, 11
0
0
50
50
ns
OutputDisabletoHigh-Z
-200
-250
CE =OE=V
IL
, WE =V
IH
t
DFR
9, 10, 11
0
0
300
350
ns
RES toOutputDelay
3
-200
-250
3. Guaranteedbydesign.
CE =OE =V
IL
WE =V
IH
t
RR
9, 10, 11
0
0
525
600
ns
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