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參數(shù)資料
| 型號： | 28LV010RT1DB20 |
| 廠商： | Maxwell Technologies, Inc |
| 英文描述： | CAP ARRAY, 2 X 15PF 50V 0405NPOCAP ARRAY, 2 X 15PF 50V 0405NPO; Capacitance:0.015nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, +:10%; Tolerance, -:10%; Temp, op. max:125(degree C); |
| 中文描述： | 3.3V的1兆位（128K的× 8位）的EEPROM |
| 文件頁數(shù)： | 4/20頁 |
| 文件大?。?/td> | 363K |
| 代理商： | 28LV010RT1DB20 |
M
4
Alldatasheetsaresubjecttochangewithoutnotice
2001MaxwellTechnologies
Allrightsreserved.
3.3V 1Megabit(128K x8-Bit)EEPROM
28LV010
03.14.03REV 6
T
ABLE
7.28LV010AC C
HARACTERISTICS FOR
R
EAD
O
PERATION1
(V
CC
=3.3V ± 10%, T
A
=-55
TO
+125°C
UNLESS OTHERWISE SPECIFIED
)
1. Testconditions:Inputpulselevels-0.4V to2.4V;inputriseandfalltimes<20ns;outputload-1TTLgate+100pF (including
scopeandjig);referencelevelsformeasuringtimng-0.8V/1.8V.
2.
t
DF
andt
DFR
isdefinedasthetimeatwhichtheoutputbecomesanopencircuitanddataisnolongerdriven.
P
ARAMETER
T
EST
C
ONDITIONS
S
YMBOL
S
UBGROUPS
M
IN
M
AX
U
NIT
AddressAccessTime
-200
-250
CE =OE =V
IL
, WE =V
IH
t
ACC
9, 10, 11
--
--
200
250
ns
ChipEnableAccessTime
-200
-250
OE =V
IL
, WE =V
IH
t
CE
9, 10, 11
--
--
200
250
ns
OutputEnableAccessTime
-200
-250
CE =V
IL
, WE =V
IH
t
OE
9, 10, 11
0
0
110
120
ns
OutputHoldtoAddressChange
-200
-250
CE =OE =V
IL
, WE =V
IH
t
OH
9, 10, 11
0
0
--
--
ns
OutputDisabletoHigh-Z
2
-200
-250
CE =V
IL
, WE =V
IH
t
DF
9, 10, 11
0
0
50
50
ns
OutputDisabletoHigh-Z
-200
-250
CE =OE=V
IL
, WE =V
IH
t
DFR
9, 10, 11
0
0
300
350
ns
RES toOutputDelay
3
-200
-250
3. Guaranteedbydesign.
CE =OE =V
IL
WE =V
IH
t
RR
9, 10, 11
0
0
525
600
ns
相關PDF資料 |
PDF描述 |
|---|---|
| 28LV010RT1DB25 | Ceramic Capacitor Array; Capacitor Type:Chip Array; Capacitance:22pF; Capacitance Tolerance:+/- 10%; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0405; Termination:SMD RoHS Compliant: Yes |
| 28LV010RT1DE-20 | CAP ARRAY, 2 X 680PF 50V 0405NPOCAP ARRAY, 2 X 680PF 50V 0405NPO; Capacitance:0.68nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, +:10%; Tolerance, -:10%; Temp, op. max:125(degree C); |
| 28LV010RPDB-20 | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RPDB-25 | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RPDE-20 | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 28LV010RT1DB-20 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RT1DB25 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RT1DB-25 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RT1DE20 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RT1DE-20 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
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