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參數(shù)資料
| 型號(hào)： | 28LV010RT1DB-20 |
| 廠商： | MAXWELL TECHNOLOGIES |
| 元件分類： | PROM |
| 英文描述： | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 中文描述： | 128K X 8 EEPROM 3V, 200 ns, DIP32 |
| 封裝： | DIP-32 |
| 文件頁數(shù)： | 13/20頁 |
| 文件大?。?/td> | 363K |
| 代理商： | 28LV010RT1DB-20 |
M
13
Alldatasheetsaresubjecttochangewithoutnotice
2001MaxwellTechnologies
Allrightsreserved.
3.3V 1Megabit(128K x8-Bit)EEPROM
28LV010
03.14.03REV 6
F
IGURE
9.T
OGGLE
B
IT
W
AVEFORM
EEPROMA
PPLICATION
N
OTES
This applicationnote describes the programmng procedures forthe EEPROMmodules andwithdetails of various
techniquestopreservedataprotection.
AutomaticPageWrite
Page-mode write feature allows 1 to128 bytes of data tobe writtenintothe EEPROMina single write cycle, and
allows theundefineddatawithin128bytes tobewrittencorrespondingtotheundefinedaddress (A0toA6). Loading
thefirstbyteofdata, thedataloadwindowopens30μsforthesecondbyte.Inthesamemannereachadditionalbyte
of data canbe loadedwithin30 μs. Incase CE andWE are kepthighfor100(s afterdata input, EEPROMenters
eraseandwritemodeautomaticallyandonlytheinputdataarewrittenintotheEEPROM.
WE CE PinOperation
Duringawritecycle, addresses arelatchedbythefallingedgeofWE orCE, anddatais latchedbytherisingedgeof
WE orCE.
DataPolling
Data Polling functionallows the status ofthe EEPROMtobe determned. IfEEPROMis settoreadmode during a
writecycle, aninversionofthelastbyteofdatatobeloadedoutputs fromI/O7toindicatethattheEEPROMis per-
formngawriteoperation.
RDY/BusySignal
RDY/Busysignalalsoallows acomparisonoperationtodetermnethestatus oftheEEPROM TheRDY/Busysignal
has highimpedanceexceptinwritecycleandis loweredtoV
OL
afterthefirstwritesignal. Atthe-endofawritecycle,
theRDY/Busysignalchangesstatetohighimpedance.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28LV010RT1DB-25 | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RT1DB20 | CAP ARRAY, 2 X 15PF 50V 0405NPOCAP ARRAY, 2 X 15PF 50V 0405NPO; Capacitance:0.015nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, +:10%; Tolerance, -:10%; Temp, op. max:125(degree C); |
| 28LV010RT1DB25 | Ceramic Capacitor Array; Capacitor Type:Chip Array; Capacitance:22pF; Capacitance Tolerance:+/- 10%; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0405; Termination:SMD RoHS Compliant: Yes |
| 28LV010RT1DE-20 | CAP ARRAY, 2 X 680PF 50V 0405NPOCAP ARRAY, 2 X 680PF 50V 0405NPO; Capacitance:0.68nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, +:10%; Tolerance, -:10%; Temp, op. max:125(degree C); |
| 28LV010RPDB-20 | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28LV010RT1DB25 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RT1DB-25 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RT1DE20 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RT1DE-20 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RT1DE25 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
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