參數(shù)資料
型號(hào): 28F320C3
廠商: INTEL CORP
元件分類: DRAM
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
中文描述: 32M X 8 FLASH 3V PROM
文件頁(yè)數(shù): 17/59頁(yè)
文件大?。?/td> 321K
代理商: 28F320C3
E
28F800C3, 28F160C3, 28F320C3
17
PRELIMINARY
Table 6. Command Codes and Descriptions
(Continued)
Code
Device Mode
Description
2F
Lock-Down
If the previous command was a Configuration Set-Up command, the CUI will
latch the address and lock-down the block indicated on the address pins.
(Section 3.3)
98
Read
Query
Puts the device into the read query mode so that reading the device will output
Common Flash Interface information. See Section 3.2.4 and Appendix C.
C0
Protection
Program
Setup
This is a two-cycle command. The first cycle prepares the CUI for a program
operation to the protection register. The second cycle latches addresses and
data information and initiates the WSM to execute the Protection Program
algorithm to the protection register. The flash outputs status register data when
CE# or OE# is toggled. A Read Array command is required after programming
to read array data. See Section 3.4.
10
Alt. Prog Set-Up
Operates the same as Program Set-up command. (See 40H/Program Set-Up)
00
Invalid/
Reserved
Unassigned commands that should not be used. Intel reserves the right to
redefine these codes for future functions.
NOTE:
See Appendix A for mode transition information.
相關(guān)PDF資料
PDF描述
28F800C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
28F160C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
28F320D18 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲(chǔ)器)
28F320J5 5 Volt Intel StrataFlash Memory(5 V 32M位英特爾StrataFlash存儲(chǔ)器)
28F640J5 5 V Intel StrataFlash Memory(5V 64M位英特爾StrataFlash閃速存儲(chǔ)器)
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